Semiconductor device and method of making including cap layer and nitride semiconductor layer

ABSTRACT

To enhance the reliability of the semiconductor device using a nitride semiconductor. A channel layer is formed over a substrate, a barrier layer is formed over the channel layer, a cap layer is formed over the barrier layer, and a gate electrode is formed over the cap layer. In addition, a nitride semiconductor layer is formed in a region where the cap layer over the barrier layer is not formed, and a source electrode and a drain electrode are formed over the nitride semiconductor layer. The cap layer is a p-type semiconductor layer, and the nitride semiconductor layer includes the same type of material as the cap layer and is in an intrinsic state or an n-type state.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.14/031,852, filed on Sep. 19, 2013, which claims benefit of priorityfrom the prior Japanese Application No. 2012-215346, filed on Sep. 28,2012; the entire contents of all of which are incorporated herein byreference.

BACKGROUND

The present invention relates a semiconductor device and a method ofmanufacturing the same, and can be preferably used for a semiconductordevice using a nitride semiconductor, for example, and a method ofmanufacturing the same.

GaN-based nitride semiconductors, having a wider band gap and a higherelectronic speed than Si and GaAs, are expected to be applied totransistors in high withstand voltage, high output, and high frequencyapplications, and are actively developed recently.

Japanese Patent Laid-Open No. 11-261053 describes a technique related toa High Electron Mobility Transistor (HEMT) including a GaN-basedcompound semiconductor.

Japanese Patent Laid-Open No. 2005-244072 describes a technique relatedto a field effect transistor using a normally-off nitride semiconductor.

Japanese Patent Laid-Open No. 2006-339561 describes a technique relatedto a field effect transistor including a normally-off nitridesemiconductor.

Japanese Patent Laid-Open No. 2008-244324 describes a technique relatedto an etching method of a nitride compound semiconductor layer and asemiconductor device manufactured using the method.

Non-Patent Document 1 (Ray-Ming Lin, Appl. Phys. Lett. 92, 261,105(2008) “Enhanced characteristics of blue InGaN/GaN light-emitting diodesby using selective activation to modulate the lateral current spreadinglength”) describes a technique related to an InGaN/GaN-based blue lightemitting diode.

SUMMARY

There are semiconductor devices using nitride semiconductors, which arealso desired to have enhanced reliability as much as possible.Alternatively, the enhancement of the performance of the semiconductordevices is desired, or realization of the both is desired.

The other problems and the new feature will become clear from thedescription of the present specification and the accompanying drawings.

According to an embodiment, a second nitride semiconductor layer isformed over a first nitride semiconductor layer, and after a first metallayer including titanium or tantalum has been formed over the secondnitride semiconductor layer excluding a first region, the reaction ofthe first metal layer and the second nitride semiconductor by performingthermal treatment forms a metal nitride layer. Subsequently, afterremoving the metal nitride layer by wet etching and leaving the secondnitride semiconductor layer of the first region, a gate electrode isformed over the second nitride semiconductor layer remaining in thefirst region.

In addition, according to an embodiment, there are provided a barrierlayer formed over a channel layer, cap layer formed over the barrierlayer, a gate electrode formed over the cap layer, a nitridesemiconductor layer formed over the barrier layer in a region which isdifferent from the cap layer, and a source electrode and a drainelectrode formed over the nitride semiconductor layer. In addition, thecap layer is a p-type semiconductor layer, whereas the nitridesemiconductor layer includes the same material as the cap layer and isin an intrinsic state or an n-type state.

In addition, according to an embodiment, there are provided a barrierlayer formed over a channel layer, a cap layer formed over the barrierlayer, a gate electrode formed over the cap layer, a nitridesemiconductor layer formed over the barrier layer in a region which isdifferent from the cap layer, and a source electrode and a drainelectrode formed over the nitride semiconductor layer. In addition, thecap layer has a stacked structure of a first layer and a second layerover the first layer, the second layer is a p-type semiconductor layer,and the nitride semiconductor layer includes a similar material to thefirst layer and is in an n-type state.

In addition, according to an embodiment, there are provided a barrierlayer formed over a channel layer, a cap layer formed over the barrierlayer, a gate electrode formed over the cap layer, and a sourceelectrode and a drain electrode formed in a region over the barrierlayer and not having the cap layer formed therein. In addition, the caplayer is in an intrinsic state, and a surface layer part of the barrierlayer in a region which is not covered with the cap layer has a higherelectron carrier concentration than the barrier layer BR of a regionother than the surface layer part.

According to an embodiment, the reliability of the semiconductor devicecan be enhanced. Alternatively, the performance of the semiconductordevice can be enhanced. It is also possible to realize the both.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a main part cross-sectional view of a semiconductor device ofan embodiment;

FIG. 2 is a process flow diagram illustrating a manufacturing process ofa semiconductor device of an embodiment;

FIG. 3 is a main part cross-sectional view of a semiconductor deviceduring a manufacturing process according to an embodiment;

FIG. 4 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 3;

FIG. 5 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 4;

FIG. 6 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 5;

FIG. 7 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 6;

FIG. 8 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 6;

FIG. 9 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 8;

FIG. 10 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 6;

FIG. 11 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 10;

FIG. 12 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 6;

FIG. 13 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 7.

FIG. 14 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 13;

FIG. 15 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 12;

FIG. 16 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 14;

FIG. 17 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 14;

FIG. 18 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 17;

FIG. 19 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 18;

FIG. 20 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 19;

FIG. 21 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 20;

FIG. 22 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 21;

FIG. 23 is a main part cross-sectional view of an exemplarysemiconductor device during a manufacturing process;

FIG. 24 is a main part cross-sectional view of the exemplarysemiconductor device during the manufacturing process following FIG. 23;

FIG. 25 is a main part cross-sectional view of the exemplarysemiconductor device during the manufacturing process following FIG. 24;

FIG. 26 is a main part cross-sectional view of the exemplarysemiconductor device during the manufacturing process following FIG. 25;

FIG. 27 is a main part cross-sectional view of the exemplarysemiconductor device during the manufacturing process following FIG. 26;

FIG. 28 is a main part cross-sectional view of a semiconductor device ofanother embodiment;

FIG. 29 is a process flow diagram illustrating a manufacturing processof a semiconductor device of another embodiment;

FIG. 30 is a main part cross-sectional view of a semiconductor deviceduring a manufacturing process according to another embodiment;

FIG. 31 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 30;

FIG. 32 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 31;

FIG. 33 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 32;

FIG. 34 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 33;

FIG. 35 is a main part cross-sectional view of a semiconductor device ofanother embodiment;

FIG. 36 is a process flow diagram illustrating a manufacturing processof a semiconductor device of another embodiment;

FIG. 37 is a main part cross-sectional view of a semiconductor deviceduring a manufacturing process according to another embodiment;

FIG. 38 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 37;

FIG. 39 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 38;

FIG. 40 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 39; and

FIG. 41 is a main part cross-sectional view of the semiconductor deviceduring the manufacturing process following FIG. 40.

DETAILED DESCRIPTION

The following embodiments will be explained, divided into pluralsections or embodiments, if necessary for convenience. Except for thecase where it shows clearly in particular, they are not mutuallyunrelated and one has relationships such as a modification, details, andsupplementary explanation of some or entire of another. In the followingembodiments, when referring to the number of elements, and the like(including the number, a numeric value, an amount, a range, and thelike), they may be not restricted to the specific number but may begreater or smaller than the specific number, except for the case wherethey are clearly specified in particular and where they are clearlyrestricted to a specific number theoretically. Furthermore, in thefollowing embodiments, it is needless to say that an element (includingan element step and the like) is not necessarily indispensable, exceptfor the case where it is clearly specified in particular and where it isconsidered to be clearly indispensable from a theoretical point of view,or the like. Similarly, in the following embodiments, when shape,position relationship, or the like of an element or the like is referredto, what resembles or is similar to the shape substantially shall beincluded, except for the case where it is clearly specified inparticular and where it is considered to be clearly not right from atheoretical point of view. This statement also applies to the numericvalue and range described above.

In the following, embodiments will be described in detail based ondrawings. In all the drawings for explaining embodiments, the samesymbol is attached to the same member, as a principle, and the repeatedexplanation thereof is omitted. Additionally, in the followingembodiments, explanation of identical or similar parts will not berepeated as a principle unless particularly required.

Additionally, in the drawings used in the embodiments, hatching may beomitted in order to make a drawing intelligible even if it is across-sectional view. In addition, hatching may be attached in order tomake a drawing intelligible even if it is a plan view.

First Embodiment

<Structure of the Semiconductor Device>

A semiconductor device of the present First Embodiment, as well as theSecond and Third Embodiments described below, is a semiconductor devicehaving a field effect transistor, which is here a High Electron MobilityTransistor (HEMT).

FIG. 1 is a main part cross-sectional view of a semiconductor device ofthe present embodiment.

As illustrated in FIG. 1, the semiconductor device of the presentembodiment has a buffer layer BUF formed over a substrate SUB, a channellayer CH including a nitride semiconductor formed over the buffer layerBUF, a barrier layer (an electron supply layer, a nitride semiconductorlayer) BR including a nitride semiconductor formed over the channellayer CH, and a cap layer CP and a nitride semiconductor layer NS formedover the barrier layer BR. That is, the buffer layer BUF, the channellayer CH, and the barrier layer BR are formed (stacked), in the orderfrom bottom to top, over the main surface (top surface) of the substrateSUB, and the cap layer CP and the nitride semiconductor layer NS areformed over the barrier layer BR in planar regions which are differentfrom each other. A gate electrode GE is formed over the cap layer CP,and a source electrode SE and a drain electrode DE are formed over thenitride semiconductor layer NS.

The substrate SUB is a semiconductor substrate (single crystal siliconsubstrate) including, for example, silicon (Si). As another form, asapphire substrate or a silicon carbonate (SiC) substrate can also beused for the substrate SUB.

The buffer layer BUF is formed in order to alleviate the latticeconstant difference between the substrate SUB and the channel layer CH.For example, the lattice constant difference between silicon (Si)included in the substrate SUB and gallium nitride (GaN) included in thechannel layer CH can be relaxed by the buffer layer BUF. That is, thereis a concern that when the channel layer CH including gallium nitride(GaN) is formed directly over the substrate SUB including silicon (Si),a number of cracks may occur in the channel layer CH, whereby a goodepitaxial growth layer cannot be obtained, making it difficult tomanufacture a high electron mobility transistor. Accordingly, the bufferlayer BUF is inserted between the substrate SUB and the channel layer CHfor the purpose of lattice relaxation. Formation of the buffer layer BUFallows a good epitaxial growth layer to be provided in the channel layerCH formed over the buffer layer BUF and facilitates manufacturing of ahigh electron mobility transistor.

The buffer layer BUF can be a gallium nitride (GaN) layer, an aluminumgallium nitride (AlGaN) layer, an aluminum nitride (AlN) layer, or astacked membrane thereof.

The channel layer CH, including a nitride semiconductor, is preferably agallium nitride layer including gallium nitride (GaN). The galliumnitride included in the channel layer CH is preferably undoped galliumnitride. As another form, the channel layer CH can also be an indiumgallium nitride (InGaN) layer.

Additionally, in the present embodiment, the channel layer CH is formedover the substrate SUB via the buffer layer BUF. As another form, anitride semiconductor substrate including gallium nitride (GaN) oraluminum gallium nitride (AlGaN) can also be used for the substrate SUB,in which case the channel layer CH can also be formed by making thebuffer layer BUF thinner, or without using the buffer layer BUF. This ispossible because using a nitride semiconductor substrate includinggallium nitride (GaN) or aluminum gallium nitride (AlGaN) or the likethe substrate SUB allows the buffer layer BUF or the channel layer CHincluding gallium nitride to be formed over the nitride semiconductorsubstrate in a lattice-matched manner.

The barrier layer (electron supply layer) BR, including a nitridesemiconductor which is different from the nitride semiconductor for thechannel layer CH, is formed by a nitride semiconductor preferablycontaining aluminum (Al). For barrier layer (electron supply layer) BR,an aluminum gallium nitride layer including aluminum gallium nitride(AlGaN) can be preferably used in particular. As another form, thebarrier layer (electron supply layer) BR can also be an aluminum indiumgallium nitride layer including aluminum indium gallium nitride(AlInGaN).

The barrier layer BR is a nitride semiconductor layer having a differentcomposition from the channel layer CH, and thus is a nitridesemiconductor layer having a different band gap from the band gap of thechannel layer CH. Specifically, the barrier layer BR is a nitridesemiconductor layer having a larger band gap than the band gap of thechannel layer CH.

The barrier layer BR is formed in a manner directly contacting thechannel layer CH, so that the channel layer CH and the barrier layer BRare in contact. Accordingly, a hetero junction having a conduction bandand discontinuity is formed between the channel layer CH and the barrierlayer BR. The barrier layer BR, being an electron supply layer, canfunction as a carrier generation region.

The cap layer (p-type cap layer, the p-type semiconductor layer) CP ispartially formed over the barrier layer BR, and the gate electrode GE isformed over the cap layer CP. Namely, the gate electrode GE is formedover the barrier layer BR via the cap layer CP, the barrier layer BR andthe gate electrode GE having the cap layer CP interposed therebetween.

The cap layer CP, being a p-type nitride semiconductor layer, preferablyincludes gallium nitride (GaN). Since the cap layer CP is asemiconductor layer exhibiting a p-type conductivity, the cap layer CPhas p-type impurities such as magnesium (Mg), for example, introduced(doped) thereinto. A cap layer CP1 described below corresponds to thecap layer CP.

The nitride semiconductor layer NS is formed in a different region fromthe region where the cap layer CP is formed over the barrier layer BR.Specifically, the cap layer CP and the nitride semiconductor layer NSare adjacent in a plan view, and the nitride semiconductor layer NS isformed in a region where the cap layer CP is not formed over the barrierlayer BR. A nitride semiconductor layer NS2 described below correspondsto the nitride semiconductor layer NS.

The source electrode SE and the drain electrode DE are respectivelyformed over the nitride semiconductor layer NS. However, the sourceelectrode SE and the drain electrode DE are not integrally formed butseparated from each other, and they are partially formed over thenitride semiconductor layer NS respectively, in a manner sandwiching thegate electrode GE therebetween. The gate electrode GE, the sourceelectrode SE, and the drain electrode DE are separated from each otherin a plan view. The gate electrode GE is formed in a manner contained inthe cap layer CP in a plan view, the source electrode SE is formed in amanner contained in the nitride semiconductor layer NS in a plan view,and the drain electrode DE is formed in a manner contained in thenitride semiconductor layer NS in a plan view.

Since the nitride semiconductor layer NS is formed over the barrierlayer BR, and the source electrode SE and the drain electrode DE areformed over the nitride semiconductor layer NS in a manner separatedfrom each other, there arises a state in which the source electrode SEand the drain electrode DE are formed over the barrier layer BR via thenitride semiconductor layer NS. The barrier layer BR and the sourceelectrode SE have the nitride semiconductor layer NS interposedtherebetween, and the barrier layer BR and the drain electrode DE havethe nitride semiconductor layer NS interposed therebetween.

The nitride semiconductor layer NS includes the same type of material asthe cap layer CP. Accordingly, when the cap layer CP includes galliumnitride (GaN), the nitride semiconductor layer NS also includes galliumnitride (GaN). However, although the cap layer CP exhibits a p-typeconductivity, the nitride semiconductor layer NS is in an intrinsicstate or exhibits an n-type conductivity. Accordingly, it is preferablethat the cap layer CP is formed by p-type gallium nitride (GaN) and thenitride semiconductor layer NS is formed by gallium nitride (GaN) in anintrinsic state or having an n-type conductivity. Here, an n-typeconductivity indicates that the majority carriers are electrons. Inaddition, a p-type conductivity indicates that the majority carriers areholes. In addition, the intrinsic state is a state in which the densityof electrons and the density of holes being the carriers areapproximately the same or a state in which no carrier has beengenerated.

The same p-type impurities (e.g., Mg) as the p-type impurities (e.g.,Mg) introduced (doped) into the cap layer CP are also introduced (doped)into the nitride semiconductor layer NS with an approximately samedensity. Here, the nitride semiconductor layer NS has a larger number ofnitrogen (N) holes (number of holes per unit volume; density of nitrogenholes) than the cap layer CP. Since the nitrogen holes function asdonors, the n-type carriers (electron carriers) generated by thenitrogen holes act in a manner compensating the p-type carriers (holecarriers) generated by the doped p-type impurities (e.g., Mg). That is,the cap layer CP does not have sufficient nitrogen (N) holes generatedtherein for compensating the p-type carriers resulting from the dopedp-type impurities, and thus the cap layer CP exhibits a p-typeconductivity. In contrast, the nitride semiconductor layer NS hassufficient nitrogen (N) holes generated therein for compensating thep-type carriers resulting from the doped p-type impurities, and thus thenitride semiconductor layer NS exhibits an intrinsic state or an n-typeconductivity.

In the present embodiment, as well as the Second and Third Embodimentsdescribed below, intrinsic refers to a state in which the effectivecarrier concentration (when both p-type carriers and n-type carriersexist, their difference corresponds to the effective carrierconcentration) is equal to or less than 1×10¹⁵/cm³. In addition, p-typerefers to a state in which the effective carrier concentration is largerthan 1×10¹⁵/cm³ and the majority carriers are of p-type (hole). Inaddition, n-type refers to a state in which the effective carrierconcentration is larger than 1×10¹⁵/cm³ and the majority carriers are ofn-type (electrons). Accordingly, the nitride semiconductor layer NS2 isin a state in which the effective carrier concentration is equal to orless than 1×10¹⁵/cm³ or in a state of exhibiting an n-type conductivity(electron carrier (Majority Carrier).

The source electrode SE, the drain electrode DE, and the gate electrodeGE, all of which include a conductor, are formed by a metal film(single-body film or stacked layer film of metal), for example. Thesource electrode SE, the drain electrode DE, and the gate electrode GEextend in a substantially perpendicular direction to the surface of FIG.1.

The gate electrode GE is located between the source electrode SE and thedrain electrode DE in a plan view. Namely, the gate electrode GE issandwiched between the source electrode SE and the drain electrode DE ina plan view. That is, the source electrode SE and the drain electrode DEseparated from each other are formed over the barrier layer BR via thenitride semiconductor layer NS, and the gate electrode GE is formed viathe cap layer CP over the barrier layer BR sandwiched between the sourceelectrode SE and the drain electrode DE in a plan view. The sourceelectrode SE and the drain electrode DE are ohmic coupled to the nitridesemiconductor layer NS. When being Schottky-coupled to the cap layer CP,the gate electrode GE is preferable because gate leakage current can bereduced thereby.

Expressions such as “plan view”, “in a planar manner”, or “viewed fromabove” refer to a case of being viewed from a plane parallel to the mainsurface (top surface) of the substrate SUB (therefore, a plane parallelto the top surface of the channel layer CH).

In this way, a High Electron Mobility Transistor (HEMT) is formed. Sucha high electron mobility transistor has two-dimensional electron gas(two-dimensional electron gas layer) DEG generated (formed) near theinterface between the channel layer CH and the barrier layer BR. Namely,the band gap of (gallium nitride (GaN) constituting) the channel layerCH and the band gap of (aluminum gallium nitride (AlGaN) constituting)the barrier layer BR are different. Accordingly, a potential well whichis lower than the Fermi level is generated near the interface betweenthe channel layer CH and the barrier layer BR, due to the conductionband offset based on the difference of band gaps and the effect ofpiezoelectric polarization and spontaneous polarization existing in thebarrier layer BR. As a result, electrons are accumulated in thepotential well, and thus the two-dimensional electron gas(two-dimensional electron gas layer) DEG is generated near the interfacebetween the channel layer CH and the barrier layer BR.

The source electrode SE and the drain electrode DE are electricallycoupled to the two-dimensional electron gas (two-dimensional electrongas layer) DEG, respectively.

Note that, in FIG. 1, the two-dimensional electron gas (two-dimensionalelectron gas layer) DEG is schematically indicated by the dashed line.

Here, the high electron mobility transistor illustrated in FIG. 1 hasthe p-type cap layer CP formed under the gate electrode GE, and thus canhave a positive threshold voltage, that is, can operate as anormally-off device.

Here, when the gate electrode GE is formed directly in contact with thebarrier layer BR without the cap layer CP, the transistor has a negativethreshold voltage, that is, can operate as a normally-on device.However, a power control transistor or the like is required to operateas a normally-off device. Accordingly, a normally-off device is realizedby employing a structure having the p-type cap layer CP formed under thegate electrode GE.

When a nitride semiconductor is used for the channel layer CH and thebarrier layer BR, the bottom of the potential well is lowered by apiezoelectric polarization and spontaneous polarization resulting fromusing a nitride semiconductor, in addition to the potential well due tothe conduction band offset between the channel layer CH and the barrierlayer BR. As a result, the two-dimensional electron gas DEG is generatednear the interface between the barrier layer BR and the channel layer CHeven without applying voltage to the gate electrode GE in the absence ofthe cap layer CP. As a result, a normally-on device is brought about.

In contrast, as to the configuration of FIG. 1 in which the p-type caplayer CP is formed under the gate electrode GE, the conduction band ofthe barrier layer BR is raised by negative charge due to ionization ofthe acceptor of the p-type cap layer CP. As a result, in a thermalequilibrium state, it is possible not to form two-dimensional electrongas in the channel layer CH. Accordingly, a normally-off device can berealized by the transistor having the configuration illustrated inFIG. 1. With a normally-off device, there is no two-dimensional electrongas (DEG) existing immediately under the gate electrode GE in a state inwhich no voltage is applied to the gate electrode GE.

<Manufacturing Process of the Semiconductor Device>

A manufacturing process of the semiconductor device of the presentembodiment will be described, referring to FIGS. 2 to 22. FIG. 2 is aprocess flow diagram illustrating the manufacturing process of thesemiconductor device of the present embodiment. FIGS. 3 to 22 are mainpart cross-sectional views illustrating the manufacturing process of thesemiconductor device of the present embodiment, in which across-sectional views of a region corresponding to FIG. 1 areillustrated.

In order to manufacture the semiconductor device of FIG. 1, thesubstrate SUB is first provided (step S1 of FIG. 2), as illustrated inFIG. 3.

Although the substrate SUB is a semiconductor substrate including, forexample, silicon (Si) (single crystal silicon substrate), a sapphiresubstrate or a silicon carbonate (SiC) substrate can be used as otherforms. In addition, a nitride semiconductor substrate including galliumnitride (GaN) or aluminum gallium nitride (AlGaN) can also be used asthe substrate SUB, in which case the buffer layer BUF can be madethinner, or even unnecessary, because the substrate SUB and thesubsequently formed channel layer CH can be lattice-matched.

Next as illustrated in FIG. 4, the buffer layer BUF which is anepitaxial layer is formed over the substrate SUB using MOCVD (MetalOrganic Chemical Vapor Deposition), for example, (step S2 of FIG. 2).The buffer layer BUF is formed for the purpose of relaxing the latticeconstant difference between the substrate SUB and the channel layer CHformed over the buffer layer BUF, for example.

Subsequently, the channel layer CH which is an epitaxial layer includingundoped (non-doped) gallium nitride (GaN) is formed over the bufferlayer BUF using MOCVD, for example (step S3 of FIG. 2). The thickness ofthe channel layer CH can be about 1 to 2 μm, for example. Althoughgallium nitride (GaN) is preferable as the material of the channel layerCH, indium gallium nitride (InGaN) can also be used as another form.

Then, as illustrated in FIG. 5, the barrier layer BR, which is anepitaxial layer including undoped (non-doped) aluminum gallium nitride(AlGaN), is formed over the channel layer CH using MOCVD (step S4 ofFIG. 2), for example. The thickness of the barrier layer BR can be about5 to 30 nm, for example. Although aluminum gallium nitride (AlGaN) ispreferable as the material of the barrier layer BR, aluminum indiumgallium nitride (AlInGaN) can also be used as another form.

Next, as illustrated in FIG. 6, the p-type nitride semiconductor layerNS1 is formed over the barrier layer BR (step S5 of FIG. 2). The nitridesemiconductor layer NS1 preferably includes p-type gallium nitride(p-type GaN), and magnesium (Mg) or the like can be used as p-typeimpurities to be introduced (doped). The nitride semiconductor layerNS1, which is an epitaxial layer, can be formed using MOCVD, forexample.

The Mg density and thickness of the p-type GaN layer (nitridesemiconductor layer NS1) are matters of design to obtain thenormally-off characteristic, and a thickness about 10 to 30 nm ispreferable when the Mg density is about 1×10¹⁹ cm⁻³. As an example, thep-type GaN layer (nitride semiconductor layer NS1) can have an Mgdensity of about 2×10¹⁹ cm⁻³ and a thickness of about 20 nm, whereas theAlGaN (barrier layer BR) can have an Al composition of 0.2 and athickness of about 18 nm.

With the processes up to step S5, there is obtained a structure in whichthe buffer layer BUF, the channel layer CH, the barrier layer BR, andthe nitride semiconductor layer NS1 are formed (stacked), in the orderfrom bottom to top, over the main surface of the substrate SUB (bufferlayer BUF may be omitted). Accordingly, the processes up to step S5 canalso be regarded as processes of providing a structure (stackedstructure) having the substrate SUB, the channel layer CH formed overthe substrate SUB, the barrier layer BR formed over the channel layerCH, and the nitride semiconductor layer NS1 formed over the barrierlayer BR.

Next, a titanium (Ti) layer TL is formed as a metal layer over thenitride semiconductor layer NS1 (step S6 of FIG. 2), as illustrated inFIG. 7. The titanium layer TL can be formed by sputtering orevaporation, for example.

Here, instead of forming the titanium layer TL over the entire topsurface of the nitride semiconductor layer NS1, it is necessary toproduce a state, as illustrated in FIG. 7, in which the titanium layerTL is not formed in a gate formation region GR of the top surface of thenitride semiconductor layer NS1, whereas the titanium layer TL is formedin a region other than the gate formation region GR. Note that the gateformation region GR corresponds to a region where the cap layer CP1 issubsequently formed. The subsequently formed gate electrode GE is formedover the cap layer CP1, and the gate electrode GE is contained in thecap layer CP1 in a plan view. Accordingly, the gate formation region GRincludes, in a plan view, the region where the gate electrode GE issupposed to be formed later.

An exemplary technique for obtaining the structure of FIG. 7 having thetitanium layer TL formed over the nitride semiconductor layer NS1 otherthan the gate formation region GR is provided in the following.

That is, after having performed up to step S5 (nitride semiconductorlayer NS1 formation process) to obtain the structure of FIG. 6, thetitanium layer TL is formed over the entire top surface of the nitridesemiconductor layer NS1 and a photoresist pattern PR1 is then formedover the titanium layer TL other than the gate formation region GR, asillustrated in FIG. 8. The photoresist pattern PR1 covers the titaniumlayer TL in a region other than the gate formation region GR, andexposes the titanium layer TL in the gate formation region GR.Subsequently, as illustrated in FIG. 9, the titanium layer TL of thegate formation region GR is removed by etching the titanium layer TL byusing the photoresist pattern PR1 as a mask (etching mask). After that,by removing the photoresist pattern PR1, there is obtained the structureof FIG. 7 in which the titanium layer TL is not formed in the gateformation region GR over the top surface of the nitride semiconductorlayer NS1, whereas the titanium layer TL is formed in a region otherthan the gate formation region GR.

In addition, another exemplary technique for obtaining the structure ofFIG. 7 in which the titanium layer TL is formed over the nitridesemiconductor layer NS1 other than the gate formation region GR isprovided in the following (so-called lift-off method).

That is, after having performed up to step S5 (nitride semiconductorlayer NS1 formation process) to obtain the structure of FIG. 6, aphotoresist pattern PR2 is formed over the nitride semiconductor layerNS1 by using the photolithography method, as illustrated in FIG. 10. Thephotoresist pattern PR2 is selectively formed in the gate formationregion GR over the nitride semiconductor layer NS1. Subsequently, asillustrated in FIG. 11, the titanium layer TL is formed over the nitridesemiconductor layer NS1 and over the photoresist pattern PR2.Thereafter, the titanium layer TL over the photoresist pattern PR2 isremoved (lifted off) together with the photoresist pattern PR2.Accordingly, the titanium layer TL is formed over the nitridesemiconductor layer NS1 in a region where the photoresist pattern PR2 isnot formed (i.e., a region other than the gate formation region GR),whereas a structure is obtained in which the titanium layer TL is notformed over the nitride semiconductor layer NS1 in a region where thephotoresist pattern PR2 has been formed (i.e., the gate formation regionGR). That is, the structure of FIG. 7 is obtained in which the titaniumlayer TL is not formed in the gate formation region GR over the topsurface of the nitride semiconductor layer NS1, whereas the titaniumlayer TL is formed in a region other than the gate formation region GR.

In this way, the structure of FIG. 7 in which the titanium layer TL isformed over the nitride semiconductor layer NS1 other than the gateformation region GR can be obtained. The titanium layer TL can be formedas a single-body film (single layer). As another form, a stacked layerfilm including the titanium layer TL (stacked metal film including aplurality of metal layers including the titanium layer TL) can also beused in place of a single-body film of the titanium layer TL, in whichcase it is preferable that the bottom layer of the stacked layer film(i.e., the layer in contact with the nitride semiconductor layer NS1) isthe titanium layer TL. For example, a stacked layer film of the titaniumlayer TL and a metal layer ML (stacked metal film) over the titaniumlayer TL can also be used in place of the single-body film of titanium(Ti) layer TL, as illustrated in FIG. 12. The metal layer ML can beformed by a different type of metal from the titanium layer TL and canbe a single-layered metal layer or a multi-layered metal layer (stackedmetal layer), which can be, for example, an aluminum (Al) layer. In FIG.12, the top surface of the nitride semiconductor layer NS1 is in a stateof having a stacked layer film (stacked metal film) of the titaniumlayer TL and the metal layer ML over the titanium layer TL formed in aregion other than the gate formation region GR, whereas neither thetitanium layer TL nor metal layer ML is formed in the gate formationregion GR.

Next, the titanium layer TL and the p-type nitride semiconductor layerNS1 are caused to react by performing thermal treatment (step S7 of FIG.2). The thermal treatment of step S7 (thermal treatment used for makingan alloy, an alloy treatment) causes the titanium layer TL to react(make an alloy) with the surface part of the nitride semiconductor layerNS1 to form a titanium nitride (TiN) layer TNL which is a reaction layer(alloyed layer) between the titanium layer TL and the nitridesemiconductor layer NS1, as illustrated in FIG. 13. The titanium nitridelayer TNL can be regarded as a metal nitride layer. In addition,although the titanium nitride layer TNL contains titanium (Ti) andnitrogen (N) as component elements, there may be a case where gallium(Ga) which has been included in the nitride semiconductor layer NS1 isfurther contained in addition to titanium (Ti) and nitrogen (N). Thethermal treatment condition of step S7 may be, for example, a thermaltreatment for about 30 seconds to 20 minutes at a temperature of 700 to900° C. The atmosphere of thermal treatment can be, for example, inertgas atmosphere or nitrogen gas atmosphere.

After the thermal treatment of step S7, the nitride semiconductor layerNS2 remains under the titanium nitride layer TNL in a layered manner.That is, the formation thickness of the nitride semiconductor layer NS1at step S5, the formation thickness of the titanium layer TL at step S6,and the thermal treatment condition at step S7 or the like are adjustedso that the nitride semiconductor layer NS2 remains under the titaniumnitride layer TNL in a layered manner after the thermal treatment ofstep S7.

The nitride semiconductor layer NS2 is the nitride semiconductor layerNS1 remaining under the titanium nitride layer TNL, the nitridesemiconductor layer NS2 includes the same type of nitride semiconductoras the nitride semiconductor layer NS1 before the thermal treatment ofstep S7 and, when the nitride semiconductor layer NS1 includes galliumnitride (GaN), the nitride semiconductor layer NS2 also includes galliumnitride (GaN). Since the titanium nitride layer TNL is generated byreaction between the surface layer part of the nitride semiconductorlayer NS1 and the titanium layer TL, the thickness of the nitridesemiconductor layer NS2 under the titanium nitride layer TNL has becomesmaller than the thickness of the nitride semiconductor layer NS1 beforethe thermal treatment of step S7. The nitride semiconductor layer NS2corresponds to the nitride semiconductor layer NS of FIG. 1.

However, the conduction characteristics of the nitride semiconductorlayer NS2 after the thermal treatment of step S7 is different from theconduction characteristics of the nitride semiconductor layer NS1 beforethe thermal treatment of step S7. That is, the nitride semiconductorlayer NS1 before the thermal treatment of step S7, being p-type galliumnitride (GaN), has a p-type conductivity. This is because, the nitridesemiconductor layer NS1 before the thermal treatment of step S7 withp-type impurities (e.g., Mg or the like) doped therein has the nature asa p-type semiconductor layer. In contrast, the nitride semiconductorlayer NS2 after the thermal treatment of step S7 is in a state in whichnitrogen (N) has escaped therefrom and nitrogen (N) holes have increasedtherein, compared with the nitride semiconductor layer NS1 before thethermal treatment of step S7. This is because nitrogen (N) is consumedalthough a reaction layer with the titanium layer TL (here, the titaniumnitride layer TNL) is generated. Causing the titanium layer TL to reactwith the nitride semiconductor layer NS1 by the thermal treatment ofstep S7 leads to a state in which nitrogen (N) is absorbed to increasenitrogen (N) holes in the nitride semiconductor layer NS2 remainingunder the titanium nitride TNL generated by the reaction.

Accordingly, in the case where the nitride semiconductor layer NS1 hasbeen formed by gallium nitride, the nitride semiconductor layer NS2after the thermal treatment of step S7 is formed by gallium nitridehaving nitrogen (N) escaped therefrom, that is, formed by galliumnitride having nitrogen (N) escaped therefrom and a large number ofholes generated therein. The increase in nitrogen (N) holes leads togeneration of n-type carriers (electron carriers) and enhancement ofn-type operation. The n-type carriers due to nitrogen holes (N) and thep-type carriers due to doped p-type impurities (e.g., Mg) compensateeach other. Accordingly, the nitride semiconductor layer NS2 does notfunction as a p-type semiconductor but functions as an intrinsic orn-type semiconductor. That is, the nitride semiconductor layer NS1before the thermal treatment of step S7 is a p-type semiconductor layer,whereas the nitride semiconductor layer NS2 after the thermal treatmentof step S7 is an intrinsic or n-type semiconductor layer.

As has been described above, intrinsic refers to a state in which theeffective carrier concentration (when both p-type carriers and n-typecarriers exist, their difference corresponds to the effective carrierconcentration) is equal to or less than 1×10¹⁵/cm³. Accordingly, thenitride semiconductor layer NS2 after the thermal treatment of step S7is in a state in which the effective carrier concentration is equal toor less than 1×10¹⁵/cm³ or in a state of exhibiting an n-typeconductivity.

As thus described, although the nitride semiconductor layer NS2 afterthe thermal treatment of step S7 also includes p-type impurities (e.g.,Mg), as with the nitride semiconductor layer NS1 before the thermaltreatment of step S7, the nitride semiconductor layer NS2 after thethermal treatment of step S7 has increased nitrogen (N) holes therein,compared with the nitride semiconductor layer NS1 before the thermaltreatment of step S7. That is, the nitride semiconductor layer NS2 hasgenerated therein nitrogen (N) holes sufficient to be capable ofcompensating for the doped p-type impurities (e.g., Mg). Therefore,comparing the nitride semiconductor layer NS2 after the thermaltreatment of step S7 with the nitride semiconductor layer NS1 before thethermal treatment of step S7, it turns out that although the density ofp-type impurities (e.g., Mg) does not change very much, the nitridesemiconductor layer NS1 functions as a p-type semiconductor layer andthe nitride semiconductor layer NS2 functions as an intrinsic or n-typesemiconductor layer, due to the difference of numbers of nitrogen (N)holes per unit volume.

In addition, since the titanium layer TL is not formed in the gateformation region GR when performing the thermal treatment of step S7,the titanium nitride layer TNL and the nitride semiconductor layer NS2are not formed in the gate formation region GR, thereby leaving thenitride semiconductor layer NS1 intact to be formed into the cap layerCP1. That is, the nitride semiconductor layer NS1 in the gate formationregion GR of the nitride semiconductor layer NS1 does not react with thetitanium layer TL and remains intact to thereby be formed into the caplayer CP1. Accordingly, the cap layer CP1 is formed by the same nitridesemiconductor as the nitride semiconductor layer NS1 and, when thenitride semiconductor layer NS1 includes gallium nitride (GaN), thenitride semiconductor layer NS2 also includes gallium nitride (GaN). Thecap layer CP1 corresponds to the cap layer CP of FIG. 1.

In addition, since the titanium layer TL is not formed over the nitridesemiconductor layer NS1 of the gate formation region GR, there is nosignificant change in the nitrogen (N) holes of the nitridesemiconductor layer NS1 in the gate formation region GR before and afterthe thermal treatment of step S7 (i.e., does not change to an extentthat the conductivity of the nitride semiconductor layer NS1 in the gateformation region GR changes from p-type to intrinsic or n-type).Accordingly, by reflecting that the nitride semiconductor layer NS1before the thermal treatment of step S7 is a p-type semiconductor layer,the cap layer CP1 after the thermal treatment of step S7 (i.e., thenitride semiconductor layer NS1 of the gate formation region GR) is alsoa p-type semiconductor layer. That is, when the nitride semiconductorlayer NS1 before the thermal treatment of step S7 is a p-type galliumnitride layer, the cap layer CP1 after thermal treatment of step S7 isalso a p-type gallium nitride layer. The thickness of the cap layer CP1is approximately equal to the thickness of the nitride semiconductorlayer NS1 before the thermal treatment of step S7.

Therefore, a region of the nitride semiconductor layer NS1 having thetitanium layer TL formed thereover (i.e., a region other than the gateformation region GR) reacts with the titanium layer TL in the thermaltreatment of step S7, whereby the titanium nitride layer TNL is formed,with the nitride semiconductor layer NS2 in an intrinsic or n-type stateremaining under the titanium nitride layer TNL in a layered manner. Inaddition, since a region of the nitride semiconductor layer NS1 nothaving the titanium layer IL formed thereover (i.e., the gate formationregion GR) does not react with the titanium layer TL in the thermaltreatment of step S7, the region remains as the p-type nitridesemiconductor layer NS1. The p-type nitride semiconductor layer NS1remaining in the gate formation region GR is formed into the cap layerCP1.

Although the thickness of the titanium nitride layer TNL to be formed isa matter of design that can be arbitrarily adjusted according to thethickness of the titanium layer TL, thermal treatment temperature, andthermal treatment time, a thicker titanium nitride TNL is formed whenthe titanium layer TL is thicker, or thermal treatment temperature ishigher, or thermal treatment time is longer. The thickness of thetitanium layer TL is preferable to be equal to or larger than 10 nm inorder to cause a reaction in a substantially deep region of the nitridesemiconductor layer NS1.

For example, in a case of forming, as the titanium layer TL over ap-type GaN layer (nitride semiconductor layer NS1), a stacked layer filmof a titanium layer having a thickness of 40 nm and an aluminum layerhaving a thickness of 80 nm thereover, a titanium nitride layer having athickness of 15 nm (titanium nitride layer TNL) is formed over a p-typeGaN layer (nitride semiconductor layer NS1) having a thickness of 20 nm,by setting thermal treatment temperature to 850° C. and thermaltreatment time to 60 seconds. The variation of the interface between thetitanium nitride layer (TNL) and the GaN layer turned out to be within 1nm, which is very steep.

Alternatively, a tantalum (Ta) layer can also be used in place of thetitanium (Ti) layer TL. When using a tantalum (Ta) layer in place oftitanium (Ti) layer TL, a tantalum nitride (TaN) layer is supposed to beformed in place of the titanium nitride layer TNL. However, sincetitanium (Ti) has a higher reactivity than tantalum (Ta) (i.e., easierto react with the nitride semiconductor layer to form a metal nitridelayer), the titanium layer TL is more preferable than a tantalum layer.

In addition, the thermal treatment of step S7 can also act as activationannealing of the p-type impurities (e.g., Mg) introduced (doped) intothe nitride semiconductor layer NS1, in which case the activationannealing process (thermal treatment) after growth (deposition) of thenitride semiconductor layer NS1 can be omitted.

Next, as illustrated in FIG. 14, the titanium nitride layer TNL isremoved by wet etching (step S8 of FIG. 2). For example, the titaniumnitride layer TNL can be removed by dipping it into hydrofluoric acid(HF) for a predetermined time (e.g., about 20 minutes). Besideshydrofluoric acid, aqua regia or the like, for example, can also be usedas wet etching solution.

It is preferable for step S8 to perform etching under a condition(etching condition) in which the etching speed of the titanium nitridelayer TNL becomes higher (faster) than the etching speed of the nitridesemiconductor layers NS1 and NS2. Namely, it is preferable to performetching at step S8 under a condition (etching condition) in which theetching speed of the nitride semiconductor layers NS1 and NS2 becomeslower (slower) than the etching speed of the titanium nitride layer TNL.That is, it is preferable to perform etching at step S8 under an etchingcondition in which etching of the nitride semiconductor layers NS1 andNS2 becomes more difficult than the titanium nitride layer TNL.

That is, it is preferable to employ, at step S8, an etching method whichis capable of selectively removing the titanium nitride layer TNL whilesuppressing etching of the nitride semiconductor layers NS1 and NS2.From this viewpoint, wet etching is preferable. In addition, using wetetching allows suppressing or preventing etching damage more than dryetching.

Although gallium nitride (GaN) is little subjected to etching even byusing hydrofluoric acid or aqua regia, the titanium nitride layer TN1resulting from reaction with the titanium layer TL can be etched byhydrofluoric acid or aqua regia. Taking advantage of this, it ispossible to selectively remove the titanium nitride layer TNL, whilesuppressing etching of the gallium nitride layer.

Additionally, in the thermal treatment of step S7, there may be a casewhere a lower part of the titanium layer TL, instead of the entirethickness of the titanium layer TL reacting with the nitridesemiconductor layer NS1, reacts with the nitride semiconductor layer NS1to form the titanium nitride layer TNL and an upper part of the titaniumlayer TL does not react with the nitride semiconductor layer NS1. Inthis case, although an unreacted titanium layer TL remains over thetitanium nitride layer TNL by performing the thermal treatment of stepS7, the titanium nitride layer TNL and the unreacted titanium layer TLover the titanium nitride TNL are removed by the wet etching of step S8.

In the thermal treatment of step S7, however, it is more preferable thatthe entire thickness of the titanium layer TL reacts with the nitridesemiconductor layer NS1 to form the titanium nitride layer TNL. In thiscase, the unreacted titanium layer TL does not remain over the titaniumnitride layer TNL by performing the thermal treatment of step S7.Namely, it is more preferable to set the formation thickness of thetitanium layer TL at step S6 or the thermal treatment condition of stepS7 so that the unreacted titanium layer TL does not remain over thetitanium nitride layer TNL after the thermal treatment of step S7. Inthis manner, the thickness of the titanium nitride layer TNL formed atstep S7 can be controlled by the thickness of the titanium layer TLbefore the thermal treatment of step S7, whereby the thickness of thetitanium nitride TNL to be formed hardly varies. Accordingly, thethickness of the nitride semiconductor layer NS2 becomes easy tocontrol, as well as appropriately leaving the nitride semiconductorlayer NS2 under the titanium nitride layer TNL. In this case, thetitanium nitride layer TNL formed at step S7 is removed by the wetetching of step S8.

Additionally, in a case where a stacked layer film including thetitanium layer TL (stacked metal film having the titanium layer TL atthe bottom layer) is used in place of the single-body film of thetitanium layer TL, the titanium layer TL reacts with the nitridesemiconductor layer NS1 by the thermal treatment of step S7 to form thetitanium nitride layer TNL, and the metal layer located higher than thetitanium layer TL remains over the titanium nitride layer TNL. In thiscase, the titanium nitride layer TNL and the metal layer remainingthereover are removed by the wet etching of step S8. For example, in acase where a stacked layer film of the titanium layer TL and a metallayer ML (e.g., aluminum layer) over the titanium layer TL is used inplace of a single-body film of the titanium layer TL, as in FIG. 12,performing the thermal treatment of step S7 causes the titanium layer TLat the lower layer side to react with the nitride semiconductor layerNS1, whereby the titanium nitride layer TNL is formed, leaving the metallayer ML (e.g., aluminum layer) over the titanium nitride TNL, asillustrated in FIG. 15. In this case, the titanium nitride layer TNL andthe metal layer ML (e.g., aluminum layer) remaining thereover areremoved by the wet etching of step S8, whereby the structure of FIG. 14is obtained.

After the wet etching of step S8, there arises a state in which thenitride semiconductor layer NS2 and the cap layer CP1 remain over thebarrier layer BR. Namely, there arises a state in which the nitridesemiconductor layer NS2 is formed over the barrier layer BR, that is,the surface (top surface) of the barrier layer BR is covered with thenitride semiconductor layer NS2, in a region where the titanium layer TLhas been formed at steps S6 and S7 (i.e., a region other than the gateformation region GR). In addition, there arises a state in which thenitride semiconductor layer NS1 (cap layer CP1) is formed over thebarrier layer BR, that is, the surface (top surface) of the barrierlayer BR is covered with the nitride semiconductor layer NS1 (cap layerCP1), in a region where the titanium layer TL is not formed at steps S6and S7 (i.e., the gate formation region GR). Therefore, the surface (topsurface) of the barrier layer BR is not exposed by performing step S8.Accordingly, the surface (top surface) of the barrier layer BR will notbe exposed after the nitride semiconductor layer NS1 has been formed atstep S5, whereby oxidation of the surface (top surface) of the barrierlayer BR can be prevented. The thickness of the nitride semiconductorlayer NS2 remaining over the barrier layer BR after the wet etching ofstep S8 is smaller than the thickness of the cap layer CP1, and can beabout 3 nm, for example.

Next, as illustrated in FIG. 16, the source electrode SE, the drainelectrode DE, and the gate electrode GE are formed (step S9 of FIG. 2).

The source electrode SE and the drain electrode DE are formed over thenitride semiconductor layer NS2 over the barrier layer BR. Accordingly,there arises a state in which the source electrode SE and the drainelectrode DE are formed over the barrier layer BR via the nitridesemiconductor layer NS2. The gate electrode GE is formed over the caplayer CP1 over the barrier layer BR. Accordingly, there arises a statein which the gate electrode GE is formed over the barrier layer BR viathe cap layer CP1.

The method of forming the source electrode SE, the drain electrode DE,and the gate electrode GE can use a variety of techniques. Thefollowings (FIGS. 17 to 22) describe an example thereof.

Namely, after having performed up to step S8 (wet etching process) andobtained the structure of FIG. 14, a photoresist pattern PR3 is formedover the barrier layer BR by photolithography, as illustrated in FIG.17. The photoresist pattern PR3 is formed in a manner exposing a regionwhere the source electrode SE is supposed to be formed later and aregion where the drain electrode DE is supposed to be formed later, andcovering other regions. Subsequently, as illustrated in FIG. 18, a metallayer ME1 for forming the source electrode SE and the drain electrode DEis formed by vapor-deposition over the photoresist pattern PR3 and thenitride semiconductor layer NS2 exposed from the photoresist patternPR3. Thereafter, as illustrated in FIG. 19, the metal layer ME1 over thephotoresist pattern PR3 is removed (lifted off) together with thephotoresist pattern PR3. Accordingly, the source electrode SE and thedrain electrode DE are formed, with the metal layer ME1 locallyremaining in the region where the source electrode SE is supposed to beformed and the region where the drain electrode DE is supposed to beformed.

Although the source electrode SE and the drain electrode DE include, forexample, a titanium (Ti) layer, an aluminum (Al) layer formed over thetitanium layer, a nickel (Ni) layer formed over the aluminum layer, anda gold (Au) layer formed over the nickel layer (Ti/Al/Ni/Au), otherconfigurations can also be employed. Although the source electrode SEand the drain electrode DE are formed in contact with the nitridesemiconductor layer NS2 over the barrier layer BR, the source electrodeSE and the drain electrode DE are separated from each other, bringingabout a state in which the cap layer CP1 is sandwiched between thesource electrode SE and the drain electrode DE. Subsequently, ohmiccontact between the source electrode SE and the nitride semiconductorlayer NS2 (or the barrier layer BR), and between the drain electrode DEand the nitride semiconductor layer NS2 (or the barrier layer BR) canalso be facilitated by performing thermal treatment.

Next, as illustrated in FIG. 20, a photoresist pattern PR4 is formedover the barrier layer BR using photolithography. The photoresistpattern PR4 is formed in a manner exposing the region where the gateelectrode GE is supposed to be formed later, and covering other regions.Subsequently, as illustrated in FIG. 21, a metal layer ME2 for formingthe gate electrode GE is formed over the photoresist pattern PR4 and thecap layer CP1 exposed from the photoresist pattern PR4 byvapor-deposition. Thereafter, illustrated in FIG. 22, the metal layerME2 over the photoresist pattern PR4 is removed (lifted off) togetherwith the photoresist pattern PR4. Accordingly, the gate electrode GE isformed, with the metal layer ME2 locally remaining in the region wherethe gate electrode GE is supposed to be formed. Although the gateelectrode GE includes, for example, a nickel (Ni) layer and a gold (Au)layer formed over the nickel layer (Ni/Au), other configurations canalso be employed. Although the gate electrode GE is formed in contactwith the cap layer CP1 over the cap layer CP1 over the barrier layer BR,bringing about a state in which the gate electrode GE is sandwichedbetween the source electrode SE and the drain electrode DE.

In addition, after having been formed, the source electrode SE, thedrain electrode DE, and the gate electrode GE may be covered with asilicon nitride film as a protection film or may have a wiring electrodeformed thereover.

In this way, the high electron mobility transistor (semiconductordevice) in the present First Embodiment can be manufactured.

<Manufacturing Process of Exemplary Semiconductor Device>

Next, an example considered by the present inventor of the presentinvention will be described. FIGS. 23 to 27 are main partcross-sectional views illustrating a manufacturing process of theexemplary semiconductor device.

In the exemplary manufacturing process, a case of forming a normally-offdevice will be described.

First, as illustrated in FIG. 23, a channel layer CH101 includinggallium nitride (GaN) is formed over the substrate SUB101, via thebuffer layer BUF101. Subsequently, a barrier layer BR101 includingaluminum gallium nitride (AlGaN) is formed over the channel layer CH101.Subsequently, a p-type gallium nitride layer NS101 is formed over thebarrier layer BR101. The p-type gallium nitride layer NS101, havingmagnesium (Mg) doped therein, is subject to thermal treatment(activation annealing) at about 700 to 800° C. for activation aftergrowth.

Next, as illustrated in FIG. 24, a photoresist pattern PR101 is formedby photolithography over the p-type gallium nitride layer NS101. Thephotoresist pattern PR101 is formed selectively in the gate formationregion GR101. Subsequently, as illustrated in FIG. 25, dry etching ofthe p-type gallium nitride layer NS101 is performed using thephotoresist pattern PR101 as an etching mask. Accordingly, theunnecessary p-type gallium nitride layer NS101 other than the gateformation region GR101 is removed, with the p-type gallium nitride layerNS101 locally remaining in the gate formation region GR101 to thereby beformed into the cap layer CP101 including p-type gallium nitride. As theetching gas on this occasion, mixed gas of Cl₂ (chlorine gas) and O₂(oxygen gas) which is capable of selective etching between aluminumgallium nitride (AlGaN) and gallium nitride (GaN) can be used, forexample. Thereafter, as illustrated in FIG. 26, the photoresist patternPR101 is removed. Thereafter, as illustrated in FIG. 27, the sourceelectrode SE101 and the drain electrode DE 101 are formed over thebarrier layer BR101, and the gate electrode GE101 is formed over the caplayer CP101. In this manner, a normally-off device can be manufactured.

In order to manufacture a normally-off device, it is necessary toremove, after formation of the p-type gallium nitride layer NS101, theunnecessary p-type gallium nitride NS101 layer (i.e., the p-type galliumnitride NS101 other than the part to be formed into the cap layerCP101).

Unlike gallium arsenic (GaAs), there is no useful selective wet etchingtechnique for gallium nitride (GaN) and thus dry etching is used toremove the unnecessary p-type gallium nitride layer NS101, but it isdifficult to remove precisely only the p-type gallium nitride layerNS101 by controlling the etching time. The unnecessary p-type galliumnitride layer NS101 remaining over the barrier layer BR101 reduces thetwo-dimensional electron gas between the gate and source, and betweenthe gate and drain, increasing the ON-resistance thereby.

In order to prevent the above problem, although it is necessary toremove the p-type gallium nitride layer NS101 and perform over-etchingup to the barrier layer BR101 when removing the unnecessary the p-typegallium nitride layer NS101 by dry etching, etching too deeply may causethinning of the barrier layer BR101 and reduction of two-dimensionalelectron gas. In addition, dry etching is susceptible to damage, andthus defects which may cause electron trap are easily formed over thesurface exposed by etching. Therefore, annealing is necessary forrecovery of damage after dry etching. In addition, adjustment of gasmixing ratio is difficult when performing selective dry etching.Additionally, since the etching gas used for dry etching containsoxygen, the barrier layer BR101 (AlGaN) exposed to the surface is easilyoxidized, which causes a problem such as increased ohmic contactresistance or easier occurrence of current collapse. Current collapserefers to a phenomenon in which the drain current increases as thevoltage increases when a voltage (drain voltage) is applied between thesource electrode and the drain electrode, whereas, when a large voltagestress is applied to the gate and the drain, less drain current flowsthan before application of the stress even if the drain voltageincreases. This may lead to a reduced performance and reliability of thesemiconductor device.

Major Characteristics and Effects of Present Embodiment

One of the major characteristics of the manufacturing process of thepresent embodiment lies in that wet etching, instead of dry etching, isused to remove the unnecessary part of the nitride semiconductor layerNS1 for forming the cap layer CP1. In this embodiment, the titaniumlayer TL is formed over the nitride semiconductor layer NS1 (step S6),thermal treatment is performed to cause a reaction between the titaniumlayer TL and the nitride semiconductor layer NS1 (step S7), and thegenerated reaction layer (titanium nitride layer TNL) is removed by wetetching (step S8).

Accordingly, the unnecessary nitride semiconductor layer NS1 (nitridesemiconductor layer NS1 other than the region where the cap layer CP1 isformed) can be selectively removed by wet etching. Therefore, the caplayer CP1 can be precisely formed without using dry etching. Since theunnecessary nitride semiconductor layer NS1 can be removed without usingdry etching, it is possible to prevent the barrier layer BR from beingdamaged by dry etching.

Namely, there is a concern that an attempt to perform wet etching of thep-type gallium nitride layer NS101 after the structure of FIG. 24 hasbeen obtained cannot ensure the etching selection ratio and may notsuccessfully perform etching of the p-type gallium nitride NS101, whilean attempt to perform dry etching of the p-type gallium nitride layerNS101 after the structure of FIG. 24 has been obtained may result inetching damage.

The present embodiment can, in contrast, form the titanium layer TL overthe nitride semiconductor layer NS1 (step 6), perform thermal treatmentto cause a reaction between the titanium layer TL and the nitridesemiconductor layer NS1 (step S7), and remove the generated reactionlayer (titanium nitride layer TNL) by wet etching (step S8) toselectively remove the reaction layer (titanium nitride layer TNL).Accordingly, it is possible to selectively remove the unnecessary partof the nitride semiconductor layer NS1 by wet etching, as well asovercoming the defects in using dry etching. Therefore, the cap layerCP1 can be appropriately formed by the remaining part of the nitridesemiconductor layer NS1. As a result, the performance of thesemiconductor device can be enhanced. In addition, the reliability ofthe semiconductor device can be enhanced.

Additionally, in the present embodiment, since wet etching, instead ofdry etching, is used to remove the unnecessary part of the nitridesemiconductor layer NS1 for forming the cap layer CP1, it is notnecessary to perform annealing for recovery from etching damage afterthe etching. In addition, the thermal treatment of step S7 can also actas activation annealing of the p-type impurities (e.g., Mg) which havebeen doped in the nitride semiconductor layer NS1.

In addition, another one of the major characteristics of the presentembodiment is such that, in the region where the titanium layer TL isformed at step S6 (i.e., the region where the titanium layer TL isformed in the thermal treatment of step S7), the nitride semiconductorlayer NS2 corresponding to the lower part of the nitride semiconductorlayer NS1 remains over the barrier layer BR after wet etching of stepS8.

Namely, the titanium layer TL is formed over the nitride semiconductorlayer NS1 at step 6, and thermal treatment is performed at step S7 tocause a reaction between the titanium layer TL and the nitridesemiconductor layer NS1. The lower part of the nitride semiconductorlayer NS1 remains as the nitride semiconductor layer NS2 in a layeredmanner under the reaction layer (titanium nitride layer TNL) generatedby the thermal treatment. The nitride semiconductor layer NS2 stillremains over the barrier layer BR in a layered manner after the wetetching of step S8.

The nitride semiconductor layer NS2 corresponding to the lower part ofthe nitride semiconductor layer NS1 remaining over the barrier layer BRafter the wet etching of step S8 can prevent the surface (top surface)of the barrier layer BR from being exposed. Accordingly, the surface(top surface) of the barrier layer BR can be prevented from beingexposed and oxidized, suppressing or preventing occurrence of currentcollapse thereby. Therefore, the performance of the semiconductor devicecan be enhanced. In addition, the reliability of the semiconductordevice can be enhanced.

If the surface of the barrier layer BR is exposed, there is a concernthat occurrence of current collapse is facilitated. This is because, ifthe surface of the barrier layer BR is exposed and oxidized, a deeplevel is formed along with the oxidation to facilitate electron capture.The barrier layer BR, containing metallic elements such as aluminum(Al), is susceptible to oxidation when exposed, in comparison withnitride semiconductor layer (e.g., gallium nitride) which does notcontain metallic elements such as aluminum (Al). In addition, oxidationof the surface of the barrier layer BR tends to facilitate occurrence ofcurrent collapse.

In contrast, with the present embodiment, the nitride semiconductorlayer NS2 corresponding to the lower part of the nitride semiconductorlayer NS1 remaining over the barrier layer BR after the wet etching ofstep S8 can prevent the surface (top surface) of the barrier layer BRfrom being exposed, whereby oxidization of the surface (top surface) ofthe barrier layer BR can be prevented. Accordingly, occurrence ofcurrent collapse due to oxidation of the surface (top surface) of thebarrier layer BR can be prevented.

Namely, since the present embodiment can prevent the surface (topsurface) of the barrier layer BR from being exposed after having formedthe nitride semiconductor layer NS1 at step S5, it is possible tosuppress or prevent defects (e.g., occurrence current collapse) due tooxidization of the surface (top surface) of the barrier layer BR.

Additionally, in the present embodiment, the source electrode SE and thedrain electrode DE are formed over the nitride semiconductor layer NS2remaining over the barrier layer BR after the wet etching of step S8(step S9). If, unlike the present embodiment, the nitride semiconductorlayer NS2 includes a p-type nitride semiconductor as with the cap layerCP1, there is a concern that the two-dimensional electron gas DEGdecreases in the lower part of the nitride semiconductor layer NS2 andreduces the performance of the HEMT.

In contrast, the nitride semiconductor layer NS2 in the presentembodiment is in a state of exhibiting intrinsic or an n-typeconductivity. That is, the nitride semiconductor layer NS2 is in a statein which the effective carrier concentration is equal to or less than1×10¹⁵/cm³ or in a state of exhibiting an n-type conductivity.Therefore, it is possible to suppress or prevent decrease of thetwo-dimensional electron gas DEG in the lower part of the nitridesemiconductor layer NS2, whereby reduction of the performance of theHEMT falls can be suppressed or prevented. For example, increase of theON-resistance of the HEMT can be suppressed or prevented. In contrast,the cap layer CP (CP1), including a nitride p-type semiconductor, canrealize a normally-off device.

Additionally, in the manufactured semiconductor device, there is aconcern of occurrence of current collapse if the thickness of thenitride semiconductor layer NS2 in the barrier layer BR is too small,whereas there is a concern of ohmic contact defect if the thickness istoo large. From this viewpoint, the thickness of the nitridesemiconductor layer NS2 over the barrier layer BR is preferable to beabout 1 nm-5 nm in the manufactured semiconductor device.

In addition, in the present embodiment, not only the p-type cap layerCP1 but also the intrinsic or n-type nitride semiconductor layer NS2 isformed using the nitride semiconductor layer NS1 for the cap layer CP1.Namely, the p-type nitride semiconductor layer NS1 for the cap layer CP1is formed at step S5, the titanium layer TL is formed over the nitridesemiconductor layer NS1 at step 6, thermal treatment is performed atstep S7 to cause a reaction between the titanium layer TL and thenitride semiconductor layer NS1. The thermal treatment of step S7 causesa reaction between nitrogen (N) in the nitride semiconductor layer NS1and titanium (Ti) in the titanium layer TL to form the titanium nitridelayer TNL, on which occasion nitrogen (N) and titanium (Ti) in thenitride semiconductor layer NS1 react and are absorbed, which results information, under the titanium nitride layer TNL, of the nitridesemiconductor layer NS2 which is the nitride semiconductor layer NS1having nitrogen (N) escaped therefrom and having holes formed therein.Accordingly, since the nitride semiconductor layer NS1 with p-typeimpurities (e.g., Mg) doped therein has been of p-type, the cap layerCP1 is of p-type and capable of realizing a normally-off device, andadditionally, the nitride semiconductor layer NS2 having holes formedtherein due to loss of nitrogen (N) therefrom can have an intrinsic orn-type conductivity. Accordingly, the p-type cap layer CP1 and theintrinsic or n-type nitride semiconductor layer NS2 can be appropriatelyformed, whereby a normally-off device can be realized, as well asimproving the performance of the semiconductor device having a fieldeffect transistor (HEMT).

As thus described, in the present embodiment, the cap layer CP1 (CP) andthe nitride semiconductor layer NS2 are formed using the common nitridesemiconductor layer NS1. Accordingly, the cap layer CP1 (CP) and thenitride semiconductor layer NS2 include the same type of material(preferably gallium nitride), and the cap layer CP1 (CP) has a p-typeconductivity, whereas the nitride semiconductor layer NS2 has anintrinsic or n-type conductivity.

The present First Embodiment, and also the Second and Third Embodimentsdescribed below realize an etching that does not use dry etching bytaking advantage of the nature that a nitride semiconductor such asgallium nitride (GaN) and titanium (Ti) react at a high temperature toform titanium nitride (metal nitride), and removing the formed titaniumnitride TNL by wet etching using hydrofluoric acid or the like. Inaddition, with the First and the Second Embodiments described below,there can be obtained a device structure in which the barrier layer BRis prevented from being exposed and thus the barrier layer BR has astable surface with little oxidation, by leaving a nitride semiconductorlayer such as gallium nitride (GaN) over the surface of a region fromwhich the titanium nitride layer TNL is removed after the wet etching ofthe titanium nitride layer TNL.

Additionally, in the present First Embodiment and the Second and theThird Embodiments described below, a tantalum (Ta) layer can also beused in place of the titanium (Ti) layer TL. When a tantalum (Ta) layeris used in place of the titanium (Ti) layer TL, a tantalum nitride (TaN)layer is supposed to be formed in place of the titanium nitride layerTNL. However, since titanium (Ti) has a higher reactivity than tantalum(Ta) (i.e., easier to react with a nitride semiconductor layer to form ametal nitride layer), the titanium layer TL is more preferable than thetantalum layer.

Second Embodiment

FIG. 28 is a main part cross-sectional view of a semiconductor device ofthe present Second Embodiment.

The semiconductor device of the present Second Embodiment illustrated inFIG. 28 differs from the semiconductor device of the First Embodimentillustrated in FIG. 1 in that the nitride semiconductor layer NS5 isformed in place of the nitride semiconductor layer NS2, and the caplayer CP2 is formed in place of the cap layer CP (CP1). Since thesemiconductor device of the present Second Embodiment is basically thesame as the semiconductor device of the First Embodiment, mainly theirdifferences will be described here.

In the First Embodiment, the cap layer CP (CP 1) has been formed as awhole by a p-type nitride semiconductor (preferably p-type galliumnitride). In contrast, the cap layer CP2 of the present SecondEmbodiment is formed by an intrinsic nitride semiconductor layer CP2 aand a p-type nitride semiconductor layer CP2 b over the nitridesemiconductor layer CP2 a. That is, the cap layer CP2 has a stackedstructure of the nitride semiconductor layer CP2 a and the nitridesemiconductor layer CP2 b, the lower side (the side contacting thebarrier layer BR) is the intrinsic nitride semiconductor layer CP2 a,and the upper side (the side contacting the gate electrode GE) is thep-type nitride semiconductor layer CP2 b. Accordingly, the gateelectrode GE is formed over the barrier layer BR via the cap layer CP2,with the gate electrode GE being in contact with the nitridesemiconductor layer CP2 b but not being in contact with the nitridesemiconductor layer CP2 a, the nitride semiconductor layer CP2 b beingin contact with the nitride semiconductor layer CP2 a but not being incontact with the barrier layer BR, and the nitride semiconductor layerCP2 a being in contact with the barrier layer BR. The nitridesemiconductor layer CP2 b and the barrier layer BR have the nitridesemiconductor layer CP2 a interposed therebetween.

The nitride semiconductor layers CP2 a and CP2 b, including a nitridesemiconductor, are preferably formed by gallium nitride (GaN). Thenitride semiconductor layer CP2 b, having p-type impurities (e.g., Mg)introduced (doped) thereinto as with the cap layer CP (CP1) of the FirstEmbodiment, has a p-type conductivity. In contrast, the nitridesemiconductor layer CP2 a is formed by an undoped (non-doped) nitridesemiconductor and has an intrinsic conductivity. Namely, the nitridesemiconductor layer CP2 a is in a state in which the effective carrierconcentration is equal to or less than 1×10¹⁵/cm³.

In addition, although the nitride semiconductor layer NS2 describedabove has been in an intrinsic or n-type state in the First Embodiment,the nitride semiconductor layer NS5 is in an n-type state in the presentSecond Embodiment. Namely, the nitride semiconductor layer NS5 is in astate of exhibiting an n-type conductivity.

The nitride semiconductor layer NS5 includes the same type of materialas the nitride semiconductor layer CP2 a. Accordingly, when the nitridesemiconductor layer CP2 a includes gallium nitride (GaN), the nitridesemiconductor layer NS5 also includes gallium nitride (GaN). However,although the nitride semiconductor layer CP2 a is in an intrinsic stateas described above, the nitride semiconductor layer NS5 is in an n-typestate. Although the nitride semiconductor layer CP2 a and the nitridesemiconductor layer NS5 include an undoped nitride semiconductor(preferably, gallium nitride) having no conductive impurities dopedtherein, the nitride semiconductor layer NS5 has more nitrogen (N) holes(a larger number of holes per unit volume) than the nitridesemiconductor layer CP2 a, and thus the nitride semiconductor layer CP2a is in an intrinsic state and the nitride semiconductor layer NS5 is inan n-type state.

The semiconductor device of the present Second Embodiment is basicallythe same as the semiconductor device of the First Embodiment except forthe foregoing.

Next, a manufacturing process of the semiconductor device of the presentSecond Embodiment will be described, referring to FIGS. 29 to 34. FIG.29 is a process flow diagram illustrating the manufacturing process ofthe semiconductor device of the present Second Embodiment. FIGS. 30 to34 are main part cross-sectional views illustrating the manufacturingprocess of the semiconductor device of the Second Embodiment, in which across-sectional view of a region corresponding to FIG. 29 isillustrated.

The manufacturing process of the present Second Embodiment is similar tothe First Embodiment as far as the barrier layer BR is formed at step S4and the structure of FIG. 5 is obtained, and thus processes after stepS4 (barrier layer BR formation process) will be described here.

After having performed steps S1 to S4 in a similar manner to the FirstEmbodiment to obtain the structure of FIG. 5, an undoped (non-doped)nitride semiconductor layer NS3 is formed over the barrier layer BR inthe present Second Embodiment, as illustrated in FIG. 30 (step S5 a ofFIG. 29). The nitride semiconductor layer NS3, preferably includinggallium nitride (GaN), is undoped (non-doped) with no conductiveimpurities introduced thereinto. The nitride semiconductor layer NS3,which is an epitaxial layer, can be formed using MOCVD, for example. Thethickness of the nitride semiconductor layer NS3 can be about 3 nm, forexample.

Next, a p-type nitride semiconductor layer NS4 is formed over thenitride semiconductor layer NS3 (step S5 b of FIG. 29). The nitridesemiconductor layer NS3 preferably includes p-type gallium nitride(p-type GaN), for which magnesium (Mg) or the like can be used as p-typeimpurities to be introduced (doped). The nitride semiconductor layerNS3, which is an epitaxial layer, can be formed using MOCVD, forexample. The thickness of the nitride semiconductor layer NS4 can beabout 17 nm, for example. The impurities density of the nitridesemiconductor layer NS4, and each thickness of the nitride semiconductorlayers NS3 and NS4 may be set so that a normally-off characteristic isobtained.

Namely, although the nitride semiconductor layer NS1 has been formedover the barrier layer BR at step S5 in the First Embodiment, thenitride semiconductor layer NS3 and the nitride semiconductor layer NS4are formed over the barrier layer BR in the order from bottom to top atsteps S5 a and S5 b in the present Second Embodiment. The totalthickness of the nitride semiconductor layers NS3 and NS4 can be setapproximately equal to the thickness of, for example, the nitridesemiconductor layer NS1, and the density of the p-type impurities (e.g.,Mg) doped in the nitride semiconductor layer NS4 may be setapproximately equal to that of, for example, the nitride semiconductorlayer NS1.

Step S5 a (nitride semiconductor layer NS3 deposition process) and stepS5 b (nitride semiconductor layer NS4 deposition process) can also beperformed successively in a manner switching the deposition gas. Forexample, the nitride semiconductor layer NS4 can also be successivelyformed over the nitride semiconductor layer NS3 by depositing thenitride semiconductor layer NS3 to a predetermined thickness by usinggallium nitride deposition gas which does not include the doping gas,and subsequently adding doping gas (doping gas for p-type impurities) tothe gallium nitride deposition gas.

Next, as illustrated in FIG. 31, a titanium (Ti) layer TL is formed as ametal layer over the nitride semiconductor layer NS4 (step S6 of FIG.29). Step S6 (titanium layer TL formation process) of the present SecondEmbodiment is basically the same as that of the First Embodiment exceptthat the titanium layer TL is formed over the nitride semiconductorlayer NS4 instead of over the nitride semiconductor layer NS1.

Accordingly, as with the First Embodiment, there also arises a state inthe present Second Embodiment in which the titanium layer TL in notformed in the gate formation region GR of the top surface of the nitridesemiconductor layer NS4, whereas the titanium layer TL is formed in theregion other than the gate formation region GR. As a method of realizingthe foregoing, the method which has been described referring to FIGS. 8and 9, or the method which has been described referring to FIGS. 10 and11, for example can be applied. Additionally, in the present SecondEmbodiment, as with the First Embodiment, a stacked metal film havingthe titanium layer TL at the bottom layer can also be formed in place ofthe single-body film of the titanium layer TL.

Next, the titanium layer TL and the nitride semiconductor layer NS4 ofp-type are caused to react by performing thermal treatment (step S7 ofFIG. 29). The thermal treatment (thermal treatment for alloying,alloying process) of step S7 causes the titanium layer TL to react (makean alloy) with the nitride semiconductor layer NS4, and the titaniumnitride (TiN) layer TNL, which is a reaction layer (alloying layer) ofthe titanium layer TL and the nitride semiconductor layer NS4, is formedas illustrated in FIG. 32. The titanium nitride layer TNL can beregarded as a metal nitride layer. In addition, although the titaniumnitride layer TNL contains titanium (Ti) and nitrogen (N) as components,there may be a case where gallium (Ga) which has been included in thenitride semiconductor layer NS4 is further contained in addition totitanium (Ti) and nitrogen (N). The thermal treatment condition on thisoccasion can be a thermal treatment for about 30 seconds to 20 minutesat a temperature of, for example, 700 to 900° C. The atmosphere ofthermal treatment can be, for example, an inert gas atmosphere or anitrogen gas atmosphere.

The difference between the present Second Embodiment and the FirstEmbodiment with regard to step S7 is that the titanium layer TL reacts(makes an alloy) with the nitride semiconductor layer NS1 to form thetitanium nitride layer TNL in the First Embodiment, whereas, in thepresent Second Embodiment, the titanium layer TL reacts (makes an alloy)with the nitride semiconductor layer NS4 to form the titanium nitridelayer TNL.

In addition, the First Embodiment has caused the nitride semiconductorlayer NS2 to remain under the titanium nitride layer TNL in a layeredmanner after the thermal treatment of step S7. In contrast, the presentSecond Embodiment causes the nitride semiconductor layer NS5 to remainunder the titanium nitride layer TNL in a layered manner after thethermal treatment of step S7. That is, each formation thickness of thenitride semiconductor layers NS3 and NS4 at steps S5 a and S5 b, theformation thickness of the titanium layer TL at step S6, and the thermaltreatment condition at step S7 are adjusted so that the nitridesemiconductor layer NS5 remains under the titanium nitride layer TNL ina layered manner after the thermal treatment of step S7.

The nitride semiconductor layer NS5, which is the nitride semiconductorlayer NS3 remaining under the titanium nitride layer TNL, includes thesame type of nitride semiconductor as the nitride semiconductor layerNS3 before the thermal treatment of step S7, and also includes galliumnitride (GaN) when the nitride semiconductor layer NS3 includes galliumnitride (GaN).

However, the conduction characteristics of the nitride semiconductorlayer NS5 after the thermal treatment of step S7 is different from theconduction characteristics of the nitride semiconductor layer NS3 beforethe thermal treatment of step S7. That is, the nitride semiconductorlayer NS3 before the thermal treatment of step S7 is undoped galliumnitride with an intrinsic conductivity. In contrast to this, the nitridesemiconductor layer NS5 after the thermal treatment of step S7 is in astate where nitrogen (N) has escaped therefrom and nitrogen (N) holeshave increased therein, compared with the nitride semiconductor layerNS3 before the thermal treatment of step S7.

In comparison with the nitride semiconductor layer NS3 before thethermal treatment of step S7, the nitride semiconductor layer NS5 afterthe thermal treatment of step S7 has nitrogen (N) escaped therefrom andnitrogen (N) holes increases therein. The reason thereof is similar tothe reason why the nitride semiconductor layer NS2 after the thermaltreatment of step S7 has nitrogen (N) escaped therefrom and increasednitrogen (N) holes, compared with the nitride semiconductor layer NS1before the thermal treatment of step S7, in the First Embodiment.Therefore, explanation thereof is not repeated here.

When the nitride semiconductor layers NS3 and NS4 are formed by galliumnitride, the nitride semiconductor layer NS5 after the thermal treatmentof step S7 is formed by gallium nitride having nitrogen (N) escapedtherefrom, in other words, is formed by gallium nitride having nitrogen(N) escaped therefrom and a large number of holes generated therein.Increase of nitrogen (N) holes leads to generation of n-type carriers(electron carriers) and enhancement of n-type operation. Accordingly,the nitride semiconductor layer NS2 functions as an n-typesemiconductor. Namely, although the nitride semiconductor layer NS3before the thermal treatment of step S7 is an undoped semiconductorlayer and has an intrinsic conductivity, the nitride semiconductor layerNS5 after the thermal treatment of step S7 is an n-type semiconductorlayer and has an n-type conductivity.

In addition, since the titanium layer TL is not formed in the gateformation region GR when performing the thermal treatment of step S7,the titanium nitride layer TNL and the nitride semiconductor layer NS5are not formed in the gate formation region GR, and the nitridesemiconductor layers NS3 and NS4 remain intact, to thereby be formedinto the cap layer CP2. That is, the part of the nitride semiconductorlayers NS3 and NS4 existing in the gate formation region GR does notreact with the titanium layer TL and remains intact to thereby be formedinto the cap layer CP2. Accordingly, the cap layer CP2 is formed by astacked layer film (stacked body) of the nitride semiconductor layer NS3and the nitride semiconductor layer NS4 over the nitride semiconductorlayer NS3.

That is, the nitride semiconductor layer NS3 remaining in the gateformation region GR after the thermal treatment of step S7 correspondsto the nitride semiconductor layer CP2 a of FIG. 28, and the nitridesemiconductor layer NS4 remaining in the gate formation region GR afterthe thermal treatment of step S7 corresponds to the nitridesemiconductor layer CP2 b of FIG. 28. Therefore, the cap layer CP2 isformed by a stacked body (stacked layer) of the nitride semiconductorlayer CP2 a which is the nitride semiconductor layer NS3 remaining inthe gate formation region GR after the thermal treatment of step S7, andthe nitride semiconductor layer CP2 b which is the nitride semiconductorlayer NS4 remaining in the gate formation region GR after thermaltreatment of step S7.

Since the titanium layer TL is not formed over the nitride semiconductorlayer NS4 of the gate formation region GR, there is no significantchange in the nitrogen (N) holes of the nitride semiconductor layers NS3and NS4 in the gate formation region GR before and after the thermaltreatment of step S7. Accordingly, by reflecting that the nitridesemiconductor layer NS3 before the thermal treatment of step S7 is in anintrinsic state and the nitride semiconductor layer NS4 is in a p-typestate, the nitride semiconductor layer CP2 a after the thermal treatmentof step S7 is in an intrinsic state and the nitride semiconductor layerCP2 b is in a p-type state. That is, the cap layer CP2 is supposed toinclude the nitride semiconductor layer CP2 a in an intrinsic state andthe p-type nitride semiconductor layer CP2 b thereover. When the nitridesemiconductor layer NS3 before the thermal treatment of step S7 is anintrinsic gallium nitride layer and the nitride semiconductor layer NS4is a p-type gallium nitride layer, the cap layer CP2 after the thermaltreatment of step S7 is supposed to include the nitride semiconductorlayer CP2 a including gallium nitride in an intrinsic state and thenitride semiconductor layer CP2 b including p-type gallium nitridethereover. The thickness of the cap layer CP2 is approximately equal tothe total thickness of the nitride semiconductor layers NS3 and NS4before the thermal treatment of step S7.

Therefore, the region of the nitride semiconductor layer NS4 having thetitanium layer TL formed at an upper part thereof (i.e., a region otherthan the gate formation region GR) reacts with the titanium layer TL bythe thermal treatment of step S7, and upon formation of the titaniumnitride layer TNL, under the titanium nitride layer TNL, the nitridesemiconductor layer NS5 in an n-type state remains in a layered manner.In addition, since the region of the nitride semiconductor layers NS3and NS4 having no titanium layer TL formed at an upper part thereof(i.e., the gate formation region GR) does not react with the titaniumlayer TL by the thermal treatment of step S7, the region remains whilemaintaining the conductivity intact to thereby be formed into the caplayer CP2.

For example, in a case where a stacked layer film of a titanium layerhaving a thickness of 40 nm and an aluminum layer having a thickness of80 nm thereover is formed as the titanium layer TL over p-type GaN layer(nitride semiconductor layer NS4), a titanium nitride layer (titaniumnitride layer TNL) having a thickness of 15 nm is formed over the p-typeGaN layer (nitride semiconductor layer NS4) having a thickness of 17 nm,by setting the thermal treatment temperature to 850° C. and the thermaltreatment time to 60 seconds.

In addition, in a similar manner to the First Embodiment, the tantalum(Ta) layer can also be used in place of titanium (Ti) layer TL also inthe present Second Embodiment, in which case a tantalum nitride layer isformed in place of the titanium nitride layer TNL. However, sincetitanium (Ti) has a higher reactivity than tantalum (Ta), the titaniumlayer TL is more preferable than the tantalum layer.

Additionally, as with the First Embodiment, the thermal treatment ofstep S7 can act as activation annealing of the p-type impurities (e.g.,Mg) introduced (doped) into the nitride semiconductor layer NS4 also inthe present Second Embodiment.

In addition, illustrated in FIG. 32 and FIGS. 33 and 34 described belowis a case, where the thickness of the nitride semiconductor layer NS5 isequal to the formation thickness of the nitride semiconductor layer NS3(therefore the thickness of the nitride semiconductor layer CP2 aincluded in the cap layer CP2), and yet the thickness of the nitridesemiconductor layer NS5 need not be equal to the formation thickness ofthe nitride semiconductor layer NS3 (therefore the thickness of thenitride semiconductor layer CP2 a included in the cap layer CP2).

Next, as illustrated in FIG. 33, the titanium nitride layer TNL isremoved by wet etching (step S8 of FIG. 29).

Since the present Second Embodiment is basically similar to the FirstEmbodiment with regard to step S8 (wet etching process), description ofsimilar contents will not be repeated. However, when description withregard to step S8 of the First Embodiment is applied to step S8 of thepresent Second Embodiment, it is supposed that the nitride semiconductorlayer NS1 described above corresponds to the stacked layer film of thenitride semiconductor layers NS4 and NS3 or the nitride semiconductorlayer NS4 in the present Second Embodiment, and the nitridesemiconductor layer NS2 described above corresponds to the nitridesemiconductor layer NS5 in the present Second Embodiment.

In the present Second Embodiment, the titanium nitride layer TNL isselectively removed by performing wet etching at step S8 under anetching condition in which the nitride semiconductor layers NS3, NS4,and NS5 are more difficult to etch than the titanium nitride layer TNL,while suppressing etching of the nitride semiconductor layers NS3, NS4,and NS5.

In the present Second Embodiment, there arises a state in which thenitride semiconductor layer NS5 and the cap layer CP2 remain over thebarrier layer BR after the wet etching of step S8. Namely, there arisesa state in which the nitride semiconductor layer NS5 is formed over thebarrier layer BR, that is, the surface (top surface) of the barrierlayer BR is covered with the nitride semiconductor layer NS5, in aregion where the titanium layer TL has been formed at steps S6 and S7(i.e., a region other than the gate formation region GR). In addition,there arises a state in which a stacked layer film of the nitridesemiconductor layers NS3 and NS4 (i.e., cap layer CP2) is formed overthe barrier layer BR, that is, the surface (top surface) of the barrierlayer BR is covered with the stacked layer film of the nitridesemiconductor layers NS3 and NS4 (i.e., cap layer CP1), in a regionwhere the titanium layer TL is not formed at steps S6 and S7 (i.e., thegate formation region GR). Therefore, the surface (top surface) of thebarrier layer BR is not exposed by performing step S8. Accordingly, thesurface (top surface) of the barrier layer BR will not be exposed afterthe nitride semiconductor layer NS3 has been formed at step S5 a. Thethickness of the nitride semiconductor layer NS5 remaining over thebarrier layer BR after the wet etching of step S8 can be about 3 nm(approximately the thickness of the nitride semiconductor layer NS3formed at step S5 a), for example.

Next, as illustrated in FIG. 34, the source electrode SE, the drainelectrode DE, and the gate electrode GE are formed (step S9 of FIG. 2).

The source electrode SE and the drain electrode DE are formed over thenitride semiconductor layer NS5 over the barrier layer BR. Accordingly,the source electrode SE and the drain electrode DE are brought into astate of being formed over the barrier layer BR via the nitridesemiconductor layer NS5. The gate electrode GE is formed over the caplayer CP2 over the barrier layer BR. Accordingly, the gate electrode GEis brought into a state of being formed over the barrier layer BR viathe cap layer CP2.

Since the method of forming the source electrode SE, the drain electrodeDE, and the gate electrode GE of the present Second Embodiment issimilar to that in the First Embodiment, description thereof is omittedhere.

In this way, the semiconductor device of the present Second Embodimentis manufactured. In addition, after having formed the source electrodeSE, the drain electrode DE, and the gate electrode GE, it may bepossible to cover them with a silicon nitride film working as aprotection film, or to form a wiring electrode thereon.

Also with the present Second Embodiment, an effect approximately similarto the First Embodiment can be obtained.

Additionally, in the First Embodiment, the nitride semiconductor layerNS2 is formed with increased nitrogen (N) holes therein, with the p-typenitride semiconductor layer NS1 as a base. In contrast, the nitridesemiconductor layer NS5 is formed with increased nitrogen (N) holestherein, with the undoped nitride semiconductor layer NS3 as a base inthe present Second Embodiment. Accordingly, it is easier in the nitridesemiconductor layer NS5 of the present Second Embodiment to increase theeffective carrier concentration than in the nitride semiconductor layerNS2 of the First Embodiment. That is, in the present Second Embodiment,the nitride semiconductor layer NS5 is formed into n-type, and theeffective carrier concentration is easily increased.

In the present Second Embodiment, since the semiconductor layer (here,the nitride semiconductor layer NS5), with which the source electrode SEand the drain electrode DE are in contact, is of n-type and has a higheffective carrier concentration, it becomes easier to ensure ohmiccontact between the source electrode SE and the nitride semiconductorlayer NS5, and between the drain electrode DE and the nitridesemiconductor layer NS5. In addition, the improvement effect (preventioneffect) of current collapse can be enhanced by forming the nitridesemiconductor layer NS5 into n-type and increasing the effective carrierconcentration.

In contrast to this, the First Embodiment, with the cap layer CP1 (CP)being a p-type semiconductor layer as a whole, has an advantage that thenormally-off design is easier than the present Second Embodiment withthe cap layer CP2 being formed by a stacked body of the intrinsicnitride semiconductor layer CP2 a and the p-type nitride semiconductorlayer CP2 b.

In addition, in the case where the nitride semiconductor layer NS3formed at step S5 an is a nitride n-type semiconductor layer havingn-type impurities doped therein unlike the present Second Embodiment,the nitride semiconductor layer CP2 a constituting the lower layer ofthe cap layer CP2 is also formed into an n-type semiconductor layer. Inthis case, it is difficult to be formed into a normally-off device (itis easier to be formed into normally-on type). Furthermore, it is alsonot easy, in terms of deposition, to switch growth of a thin (e.g.,about 3 nm) n-type gallium nitride layer having Si (n-type impurities)doped therein to growth of a p-type gallium nitride having Mg (p-typeimpurities) doped therein.

In contrast to this, since the nitride semiconductor layer NS3 formed atstep S5 a in the present Second Embodiment is a conductive and undopednitride semiconductor layer having no impurities doped therein, thenitride semiconductor layer CP2 a including the lower layer of the caplayer CP2 is in an intrinsic state. Accordingly, a normally-off devicecan be realized. In addition, it is easy, in terms of deposition, toswitch growth of an undoped thin gallium nitride layer to growth of ap-type gallium nitride having p-type impurities (e.g., Mg) dopedtherein.

Furthermore, in the semiconductor device, there is concern of generationof current collapse if the thickness of the nitride semiconductor layerNS5 over the barrier layer BR is too small, whereas there is concern ofohmic contact defect if too large. From this viewpoint, in themanufactured semiconductor device, the thickness of the nitridesemiconductor layer NS5 over the barrier layer BR is preferably about 1nm to 5 nm. In addition, setting the formation thickness of the nitridesemiconductor layer NS3 equal to or larger than 5 nm, it becomes easy tocontrol the thickness of the nitride semiconductor layer NS5 within arange of 1 to 5 nm.

Third Embodiment

In the First and Second Embodiments, application to a normally-offdevice has been described. In the present Third Embodiment, applicationto a normally-on device (e.g., a normally-on device for a high frequencyamplifier) will be described.

FIG. 35 is a main part cross-sectional view of a semiconductor device ofthe present Third Embodiment.

The semiconductor device of the present Third Embodiment illustrated inFIG. 35 is different from the semiconductor device of the FirstEmbodiment illustrated in FIG. 1 described above in that the nitridesemiconductor layer NS2 is not formed therein, the cap layer CP3 isformed in place of the cap layer CP (CP1), and a region of a surfacepart BR1 of the barrier layer BR which is not covered with the cap layerCP3 has a high electron carrier concentration. Since the semiconductordevice of the present Third Embodiment is basically the same as thesemiconductor device of the First Embodiment with regard to other parts,mainly their differences will be described here.

In the First Embodiment, the cap layer CP (CP 1) has been formed by ap-type nitride semiconductor (p-type gallium nitride). In contrast tothis, the cap layer CP3 of the present Third Embodiment is formed by anintrinsic nitride semiconductor (preferably, intrinsic gallium nitride).

The cap layer CP3, including a nitride semiconductor, is preferablyformed by gallium nitride (GaN). The cap layer CP3 is formed by anundoped (non-doped) nitride semiconductor, preferably by undoped(non-doped) gallium nitride, and has an intrinsic conductivity. That is,the cap layer CP3 is in a state in which the effective carrierconcentration is equal to or less than 1×10¹⁵/cm³.

Although the gate electrode GE is formed over the barrier layer BR viathe cap layer CP3, and the cap layer CP3 is interposed between thebarrier layer BR and the gate electrode GE, the cap layer CP3 isintrinsic, and thus the semiconductor device of the present ThirdEmbodiment is a normally-on device.

In addition, the region of the surface layer part BR1 which is notcovered with the cap layer CP3 has a higher (larger) electron carrierconcentration than other parts of the barrier layer BR (other than thesurface layer part BR1). This is because the region of the surface layerpart BR1 which is not covered with the cap layer CP3 has nitrogen (N)escaped therefrom and increased nitrogen (N) holes (i.e., increasednumber of holes per unit volume), in comparison with other parts of thebarrier layer BR (other than the surface layer part BR1).

That is, the barrier layer BR including the surface layer part BR1 is ina state of including an undoped (non-doped) nitride semiconductor(preferably, aluminum gallium nitride) having no conductive impuritiesdoped therein, whereas the region of the surface layer part BR1 of thebarrier layer BR which is not covered with the cap layer CP3 has n-typecarriers (electron carriers) generated therein by nitrogen (N) holes andexhibits an n-type conductivity. In contrast, the barrier layer BR otherthan the surface layer part BR1, having fewer nitrogen (N) holes thanthe surface layer part BR1, is in an intrinsic state (i.e., a state inwhich the effective carrier concentration is equal to or less than1×10¹⁵/cm³).

The source electrode SE and the drain electrode DE are formed over theregion of the surface layer part BR1 of the barrier layer BR which isnot covered with the cap layer CP3. Accordingly, although the sourceelectrode SE and the drain electrode DE are formed in contact with thebarrier layer BR over the barrier layer BR, it is the surface layer partBR1 of the barrier layer BR having a raised electron carrierconcentration that the source electrode SE and the drain electrode DEare in contact with.

As to other parts, the semiconductor device of the present ThirdEmbodiment is basically the same as the semiconductor device of theFirst Embodiment.

Next, a manufacturing process of the semiconductor device of the presentThird Embodiment will be described, referring to FIGS. 36 to 41. FIG. 36is a process flow diagram illustrating the manufacturing process of thesemiconductor device of the present Third Embodiment. FIGS. 37 to 41 aremain part cross-sectional views illustrating the manufacturing processof the semiconductor device of the present Third Embodiment, in which across-sectional view of a region corresponding to FIG. 36 isillustrated.

The manufacturing process of the present Third Embodiment is similar tothe First Embodiment as far as the barrier layer BR is formed at step S4and the structure of FIG. 5 is obtained, and thus processes after stepS4 (barrier layer BR formation process) will be described here.

After having performed steps S1 to S4 in a similar manner to the FirstEmbodiment to obtain the structure of FIG. 5, an undoped (non-doped)nitride semiconductor layer NS6 is formed over the barrier layer BR inthe present Third Embodiment, as illustrated in FIG. 37 (step S5 c ofFIG. 36).

The nitride semiconductor layer NS6, preferably including galliumnitride (GaN), is undoped (non-doped) with no conductive impuritiesintroduced thereinto. The nitride semiconductor layer NS6, which is anepitaxial layer, can be formed using MOCVD, for example. The thicknessof the nitride semiconductor layer NS6 can be about 3 nm, for example.

Next, as illustrated in FIG. 38, the titanium (Ti) layer TL is formed asa metal layer over the nitride semiconductor layer NS6 (step S6 of FIG.36).

At step S6, although the titanium layer TL has been formed over thenitride semiconductor layer NS1 in the First Embodiment, the titaniumlayer TL is formed over the nitride semiconductor layer NS6 in thepresent Third Embodiment. Additionally, in the First Embodiment, thereis brought about a state in which the titanium layer TL is not formed inthe gate formation region GR of the top surface of the nitridesemiconductor layer NS1, whereas the titanium layer TL is formed in aregion other than the gate formation region GR. In contrast, the presentThird Embodiment brings about a state in which the titanium layer TL isformed in a source electrode formation region SR and a drain electrodeformation region DR of the top surface of the nitride semiconductorlayer NS6, whereas the titanium layer TL is not formed in other regions.

In the First Embodiment, the titanium layer TL is formed over thenitride semiconductor layer NS1 other than the region where the caplayer CP1 is formed, in order to selectively remove the nitridesemiconductor layer NS1 in a region other than the region where the caplayer CP1 is formed.

In contrast, with the present Third Embodiment, in order to selectivelyremove the nitride semiconductor layer NS6 of a region where securing ofohmic coupling to the barrier layer BR is desired (i.e., a region wherethe source electrode SE is formed and a region where the drain electrodeDE is formed), the titanium layer TL is formed over the nitridesemiconductor layer NS6 of a region other than the region where securingof ohmic coupling is desired. Namely, there is brought about a state inwhich the titanium layer TL is formed in the source electrode formationregion SR and the drain electrode formation region DR, whereas thetitanium layer TL is not formed in a cap layer formation region CR whichis a region other than the source electrode formation region SR and thedrain electrode formation region DR. Here, the source electrodeformation region SR contains, in a plan view, a region where the sourceelectrode SE is to be formed later, and the drain electrode formationregion DR contains, in a plan view, a region where the drain electrodeDE is to be formed later. In addition, the cap layer formation region CRcorresponds to a region where the cap layer CP3 is to be formed later,containing, in a plan view, a region where the gate electrode GE is tobe formed later. Accordingly, the titanium layer TL is formed in theregion where the source electrode SE is to be formed later and theregion where the drain electrode DE is to be formed later, whereas thetitanium layer TL is not formed in the region where the gate electrodeGE is to be formed later.

With regard to other parts, step S6 (titanium layer TL formationprocess) of the present Third Embodiment is basically the same as thatof the First Embodiment.

Therefore, similarly to the First Embodiment, the method which has beendescribed referring to FIGS. 8 and 9, for example, can also be appliedas means of realizing a state in the present Third Embodiment, in whichthe titanium layer TL is formed in the source electrode formation regionSR and the drain electrode formation region DR of the top surface of thenitride semiconductor layer NS6, whereas the titanium layer TL is notformed in the cap layer formation region CR. Alternatively, the methodwhich has been described referring to FIGS. 10 and 11 can also beapplied. In addition, a stacked metal film having the titanium layer TLat the bottom layer can also be formed in place of the single-body filmof the titanium layer TL also in the present Third Embodiment, similarlyto the First Embodiment.

Next, the titanium layer TL and the nitride semiconductor layer NS6 arecaused to react by performing thermal treatment (step S7 of FIG. 36).The thermal treatment (thermal treatment for alloying, alloying process)of step S7 causes the titanium layer TL to react (make an alloy) withthe nitride semiconductor layer NS6, and the titanium nitride (TiN)layer TNL, which is a reaction layer (alloying layer) of the titaniumlayer TL and the nitride semiconductor layer NS6 is formed asillustrated in FIG. 39. The titanium nitride layer TNL can be regardedas a metal nitride layer. In addition, although the titanium nitridelayer TNL contains titanium (Ti) and nitrogen (N) as component elements,there may be a case where gallium (Ga) which has been included in thenitride semiconductor layer NS6 is further contained in addition totitanium (Ti) and nitrogen (N). The thermal treatment condition of stepS7 can be, for example, a thermal treatment for about 30 seconds to 20minutes at a temperature of 700 to 900° C. The atmosphere of thermaltreatment can be, for example, inert gas atmosphere or nitrogen gasatmosphere.

The difference between the present Third Embodiment and the FirstEmbodiment with regard to step S7 lies in that the titanium layer TLreacts (makes an alloy) with the nitride semiconductor layer NS1 to formthe titanium nitride layer TNL in the First Embodiment, whereas, in thepresent Third Embodiment, the titanium layer TL reacts (makes an alloy)with the nitride semiconductor layer NS6 to form the titanium nitridelayer TNL.

In addition, the First Embodiment has caused the nitride semiconductorlayer NS2 to remain under the titanium nitride layer TNL in a layeredmanner after the thermal treatment of step S7. In contrast, it ispreferable in the present Third Embodiment to cause the nitridesemiconductor layer NS5 to remain under the titanium nitride layer TNLin a layered manner after the thermal treatment of step S7. Namely, itis preferable that the formation thickness of the nitride semiconductorlayer NS6 at step S5 c, the formation thickness of the titanium layer TLat step S6, and the thermal treatment condition at step S7 or the likeare adjusted so that the entire thickness of the nitride semiconductorlayer NS6 reacts (makes an alloy) with the titanium layer TL by thethermal treatment of step S7 in the region where the titanium layer TLhas been formed.

Accordingly, there arises a state after the thermal treatment of step S7in which no unreacted layer of the nitride semiconductor layer NS6remains under the titanium nitride layer TNL, whereas nitrogen (N) hasbeen absorbed for generating the titanium nitride layer TNL in thesurface layer part BR1 of the barrier layer BR immediately under thetitanium nitride layer TNL, and nitrogen (N) holes have increasedthereby. Namely, the barrier layer BR after the thermal treatment ofstep S7 is in a state in which, in comparison with the barrier layer BRbefore the thermal treatment of step S7, only the part locatedimmediately under the titanium nitride layer TNL of the surface layerpart BR1 has nitrogen (N) escaped therefrom with increased nitrogen (N)holes therein. Therefore, the barrier layer BR after the thermaltreatment of step S7 is in a state in which the surface layer part BR1of the part located immediately under the titanium nitride layer TNL hasincreased nitrogen (N) holes (number of holes per unit volume) therein,in comparison with the barrier layer BR other than the part (other thanthe surface layer part BR1).

When the barrier layer BR is formed by an undoped nitride semiconductor(preferably, undoped aluminum gallium nitride) at step S4, the entirebarrier layer BR including the surface layer part BR1 is formed by anundoped nitride semiconductor (preferably, undoped aluminum galliumnitride) also after the thermal treatment of step S7. Accordingly, thebarrier layer BR before the thermal treatment of step S7 has anintrinsic conductivity as a whole. However, with regard to the barrierlayer BR after the thermal treatment of step S7, the part locatedimmediately under the titanium nitride layer TNL of the surface layerpart BR1 of the barrier layer BR has an n-type conductivity due tooccurrence of n-type carriers (electron carriers) caused by nitrogen (N)holes. In contrast, the barrier layer BR other than the surface layerpart BR1 remains in an intrinsic state after the thermal treatment ofstep S7.

In addition, since the titanium layer TL is not formed in the cap layerformation region CR when performing the thermal treatment of step S7,the titanium nitride layer TNL is not formed in the cap layer formationregion CR region, and the nitride semiconductor layer NS6 remains intactto thereby be formed into the cap layer CP3. Namely, the nitridesemiconductor layer NS6 in the source electrode formation region SR andthe drain electrode formation region DR of the nitride semiconductorlayer NS6 reacts with the titanium layer TL, whereas the nitridesemiconductor layer NS6 in the cap layer formation region CR remainsintact without reacting with the titanium layer TL to thereby be formedinto the cap layer CP3. Accordingly, the cap layer CP3 is formed by thenitride semiconductor layer NS6.

Since the titanium layer TL is not formed over the nitride semiconductorlayer NS6 of the cap layer formation region CR, there is no significantchange in the nitrogen (N) holes before and after the thermal treatmentof step S7 with regard to the nitride semiconductor layer NS6 in the caplayer formation region CR and the barrier layer BR in the cap layerformation region CR. Accordingly, reflecting that the nitridesemiconductor layer NS6 before the thermal treatment of step S7 is in anintrinsic state, the cap layer CP3 after the thermal treatment of stepS7 is in an intrinsic state. In the case where the nitride semiconductorlayer NS6 before the thermal treatment of step S7 is an undoped andintrinsic gallium nitride layer, the cap layer CP3 after the thermaltreatment of step S7 also includes gallium nitride which is undoped andin an intrinsic state. The thickness of the cap layer CP3 isapproximately equal to the thickness of the nitride semiconductor layerNS6 before the thermal treatment of step S7. In addition, reflectingthat the barrier layer BR before the thermal treatment of step S7 isundoped and in an intrinsic state, the barrier layer BR immediatelyunder the cap layer CP3 is also undoped and in an intrinsic state.

Here, the part of the surface layer part BR1 of the barrier layer BRlocated immediately under the titanium nitride layer TNL coincides withthe region of the surface layer part BR1 of the barrier layer BR whichis not covered with the cap layer CP3. This is because the cap layer CPis formed in the region where the titanium nitride layer TNL is notformed, and thus the region located immediately under the titaniumnitride layer TNL and the region which is not covered with the cap layerCP3 substantially indicates the same region in the barrier layer BR.

Therefore, in the region of the surface layer part BR1 of the barrierlayer BR which is not covered with the cap layer CP3, there are morenitrogen (N) holes (a larger number of holes per unit volume) than thebarrier layer BR other than the part (other than the surface layer partBR1), whereby the density of an electron carrier becomes high. Namely,with regard to the barrier layer BR, the region of the surface layerpart BR1 of the barrier layer BR which is not covered with the cap layerCP3 has more nitrogen (N) holes (a larger number of holes per unitvolume) than the region which is deeper than the surface layer part BR1or the region covered with the cap layer CP3, whereby the electroncarrier concentration is increased.

For example, an intrinsic GaN layer (nitride semiconductor layer NS6)having a thickness of 18 nm is formed over an AlGaN layer (barrier layerBR) having a thickness of 3 nm and an Al composition of 0.2, and astacked layer film of a titanium layer having a thickness of 40 nm andan aluminum layer having a thickness of 80 nm thereover are formed asthe titanium layer TL over the GaN layer, and a thermal treatment isperformed with a thermal treatment time of 60 seconds at a thermaltreatment temperature of 770° C. Accordingly, a titanium nitride layerhaving a thickness of 5 nm (titanium nitride layer TNL) is formed.

In addition, similarly to the First Embodiment, a tantalum (Ta) layercan also be used in place of the titanium (Ti) layer TL in the presentThird Embodiment, in which case a tantalum nitride layer is formed inplace of the titanium nitride layer TNL. However, since titanium (Ti)has a higher reactivity than tantalum (Ta), the titanium layer TL ismore preferable than the tantalum layer.

Next, as illustrated in FIG. 40, the titanium nitride layer TNL isremoved by wet etching (step S8 of FIG. 36). Although hydrofluoric acid(HF) can be preferably used as the etchant, aqua regia or the like, forexample, can also be used other than hydrofluoric acid.

It is preferable that step S8 performs etching under a condition(etching condition) that the etching speed of the nitride semiconductorlayer NS6 (cap layer CP3) and the barrier layer BR is higher (faster)than the etching speed of the titanium nitride layer TNL. Namely, it ispreferable that etching is performed at step S8 under a condition(etching condition) that the etching speed of the nitride semiconductorlayer NS6 (cap layer CP3) and the barrier layer BR is lower (slower)than the etching speed of the titanium nitride layer TNL. That is, it ispreferable that etching is performed at step S8 under an etchingcondition that the nitride semiconductor layer NS6 (cap layer CP3) andthe barrier layer BR are more difficult to etch than the titaniumnitride layer TNL. Accordingly, the titanium nitride layer TNL can beselectively removed at step S8 while suppressing etching of the nitridesemiconductor layer NS6 (cap layer CP3) and the barrier layer BR.

Although almost no gallium nitride (GaN) can be etched usinghydrofluoric acid or aqua regia, the titanium nitride layer TNLresulting from reaction with the titanium layer TL can be etched byhydrofluoric acid or aqua regia. Taking advantage of this, the titaniumnitride layer TNL can be selectively removed, while suppressing etchingof the gallium nitride layer.

In addition, after the titanium nitride layer TNL is removed at step S8,if an unreacted titanium layer TL has remained over the titanium nitridelayer TNL in the thermal treatment of step S7, the unreacted titaniumlayer TL can be removed at step S8. Additionally, in a case using astacked layer film (stacked metal film having the titanium layer TL atthe bottom layer) including the titanium layer TL in place of asingle-body film of the titanium layer TL, the metal layer remainingover the titanium nitride layer TNL is also removed at step S8.

After the wet etching of step S8, there arises a state in which the caplayer CP3 remains over the barrier layer BR. Namely, the region wherethe titanium layer TL has been formed at steps S6 and S7 (i.e., thesource electrode formation region SR and the drain electrode formationregion DR) is in a state in which the cap layer CP3 is not formed overthe barrier layer BR and the surface of the barrier layer BR is exposedthereby, whereas the surface layer part BR1 of the barrier layer BR hasincreased nitrogen (N) holes and increased electron carrierconcentration thereby. In contrast, the region where the titanium layerTL is not formed at steps S6 and S7 (i.e., cap layer formation regionCR) is in a state in which the nitride semiconductor layer NS6 (caplayer CP3) is formed over the barrier layer BR, that is, the surface(top surface) of the barrier layer BR is covered with the nitridesemiconductor layer NS6 (cap layer CP3).

In addition, there may also be a case where the region of the barrierlayer BR which is not covered with the cap layer CP3 is somewhat etched(over-etched) by the wet etching of step S8. It is also preferable inthis case to avoid the entire surface layer part BR1, with increasednitrogen (N) holes and a higher electron carrier concentration, beingremoved by over-etching so that the surface layer part BR1 remains in alayered manner. Accordingly, the region (surface layer part) of thebarrier layer BR, with which the subsequently formed source electrode SEand the drain electrode DE are in contact can be regarded as havingincreased nitrogen (N) holes and increased electron carrierconcentration. That is, it is preferable to cause the surface layer partBR1, having an increased electron carrier concentration due to escapednitrogen (N) therefrom and increased nitrogen (N) holes therein, toremain after the wet etching of step S8 in a layered manner, and causethe source electrode SE and the drain electrode DE to be formed later tocontact the surface layer part BR1 having an increased electron carrierconcentration.

For example, an intrinsic GaN layer (nitride semiconductor layer NS6)having a thickness of 3 nm is formed over an AlGaN layer (barrier layerBR) having a thickness of 18 nm, a stacked layer film of the titaniumlayer and an aluminum layer thereover is formed as the titanium layerTL, and a titanium nitride layer having a thickness of 5 nm (titaniumnitride layer TNL) is formed by thermal treatment, and the layers aredipped into hydrofluoric acid (HF) as wet etching for about 20 minutes.Accordingly, etching is performed from the surface of the GaN layer(nitride semiconductor layer NS6) up to a depth of about 7 nm, in whichcase the AlGaN layer (barrier layer BR) is assumed to have been etchedto an extent of about 4 nm (over-etching).

Next, as illustrated in FIG. 41, the source electrode SE, the drainelectrode DE, and the gate electrode GE are formed (step S9 of FIG. 36).

The source electrode SE and the drain electrode DE are formed over aregion of the barrier layer BR which is not covered with the cap layerCP3. Namely, the source electrode SE is formed over the barrier layer BRin the source electrode formation region SR, and the drain electrode DEis formed over the barrier layer BR in the drain electrode formationregion DR. Accordingly, the source electrode SE and the drain electrodeDE are supposed to be formed over the surface layer part BR1 of thebarrier layer BR, in contact with the surface layer part BR1. The gateelectrode GE is formed over the cap layer CP3 over the barrier layer BR.Accordingly, the gate electrode GE is in a state of being formed overthe barrier layer BR via the cap layer CP3.

Since the formation method of the source electrode SE, the drainelectrode DE, and the gate electrode GE of the present Third Embodimentcan be performed in a manner similar to the First Embodiment,description thereof will be omitted here.

In this way, the semiconductor device of the present Third Embodiment ismanufactured. In addition, after having formed the source electrode SE,the drain electrode DE, and the gate electrode GE, they may be coveredwith a silicon nitride film working as a protection film, or a wiringelectrode may be formed thereover.

In the present Third Embodiment, since the cap layer CP3 is formed overthe barrier layer BR, the part of the barrier layer BR which is coveredwith the cap layer CP3 can be prevented from being exposed. Accordingly,the part of the barrier layer BR which is covered with the cap layer CP3can be prevented from being oxidized. Accordingly, current collapsecaused by oxidization of the surface of the barrier layer BR can besuppressed. Therefore, the performance of the semiconductor device canbe enhanced. In addition, the reliability of the semiconductor devicecan be enhanced.

In addition, since the cap layer CP3 is in an intrinsic state, anormally-on device can be realized.

In addition, unlike the present Third Embodiment, when the intrinsicnitride semiconductor layer NS6 is interposed between the sourceelectrode SE and the barrier layer BR, and between the drain electrodeDE and the barrier layer BR, it becomes difficult to secure a good ohmiccontact of the source electrode SE and a good ohmic contact of the drainelectrode DE. Therefore, it is necessary to remove the intrinsic nitridesemiconductor layer NS6 from the source electrode formation region SRand the drain electrode formation region DR. However, using dry etching,unlike the present Third Embodiment, to remove the nitride semiconductorlayer NS6 of the source electrode formation region SR and the drainelectrode formation region DR causes an etching damage in the exposedsurface (exposed surface of the barrier layer BR) after etching, therebymaking it difficult to obtain a low ohmic contact resistance between thesource electrode SE or the drain electrode DE and the barrier layer BR.In addition, dry etching also makes it difficult to control the etchingdepth.

In contrast, the present Third Embodiment allows, by forming thetitanium layer TL over the nitride semiconductor layer NS6 at step 6,performing thermal treatment at step S7 to cause a reaction between thetitanium layer TL and the nitride semiconductor layer NS6, and removingthe generated reaction layer (titanium nitride layer TNL) by the wetetching of step S8, the reaction layer (titanium nitride layer TNL) tobe selectively removed. Accordingly, defects of using dry etching can beovercome, as well as selectively removing unnecessary parts of thenitride semiconductor layer NS6 by wet etching. Accordingly, etchingdamage in the exposed surface of the barrier layer BR after etching canbe suppressed or prevented, whereby a good ohmic contact can be securedbetween the source electrode SE and the barrier layer BR, and betweenthe drain electrode DR and the barrier layer BR so that a low ohmiccontact resistance can be realized. In addition, control of etchingdepth is facilitated. Therefore, the performance of the semiconductordevice can be enhanced. In addition, the reliability of thesemiconductor device can be enhanced.

Furthermore, in the source electrode formation region SR and the drainelectrode formation region DR of the present Third Embodiment, thesurface layer part BR1 of the barrier layer BR is brought into an n-typestate by increasing the nitrogen (N) holes therein caused by escape ofnitrogen (N) therefrom to increase the electron carrier concentration.The source electrode SE and the drain electrode DE are then formed overthe surface layer part BR1 which has become of n-type by the increasedelectron carrier concentration. Accordingly, the barrier layer BR of thepart at which the source electrode SE and the drain electrode DE come incontact is in an n-type state. Accordingly, a still better ohmic contactis secured between the source electrode SE and the surface layer partBR1 of the barrier layer BR, and between the drain electrode DE and thesurface layer part BR1 of the barrier layer BR, as well as securing astill lower ohmic contact resistance can be realized between the sourceelectrode SE and the surface layer part BR1 of the barrier layer BR, andbetween the drain electrode DE and the surface layer part BR1 of thebarrier layer BR. Therefore, the performance of the semiconductor devicecan be enhanced. In addition, the reliability of the semiconductordevice can be enhanced.

Although, in the First, Second, and Third Embodiments, gallium nitride(GaN) is preferable as materials included in the nitride semiconductorlayers NS1 and NS2, NS3, NS4, NS5, and NS6, aluminum gallium nitride(AlGaN) can also be used other than that. However, gallium nitride (GaN)is more preferable. Forming the nitride semiconductor layers NS1 andNS2, NS3, NS4, NS5, and NS6 by gallium nitride (GaN) prevents generationof the exposed part of aluminum gallium nitride (AlGaN) after formationof the nitride semiconductor layer NS1 (or, the nitride semiconductorlayer NS3 or the nitride semiconductor layer NS6), whereby theprevention of oxidation of aluminum gallium nitride (AlGaN) is allowed,making it possible to prevent current collapse more appropriately.

Hereinbefore, although the invention made by the present inventor hasbeen specifically explained on the basis of the embodiments, it isneedless to say that the invention is not limited to the above-mentionedembodiments and can be modified variously within the scope not departingfrom the gist thereof.

Apart of the contents described in the above embodiments are describedbelow.

Appendix 1

A semiconductor device having a field effect transistor, including:

a substrate;

a channel layer being formed over the substrate and including a nitridesemiconductor;

a first nitride semiconductor layer being formed over the channel layerand having a larger band gap than the channel layer;

a cap layer in an intrinsic state formed over the first nitridesemiconductor layer;

a gate electrode formed over the cap layer; and

a source electrode and a drain electrode formed in a region over thefirst nitride semiconductor layer where the cap layer is not formed,

in which a surface layer part of the first nitride semiconductor layerin the region which is not covered with the cap layer has a higherelectron carrier concentration than the first nitride semiconductorlayer in a region other than the surface layer part.

Appendix 2

The semiconductor device according to appendix 1,

in which the first nitride semiconductor layer is an aluminum galliumnitride layer.

Appendix 3

The semiconductor device according to appendix 1,

in which the surface layer part is of n-type, and the first nitridesemiconductor layer in the region other than the surface layer part isin an intrinsic state.

Appendix 4

The semiconductor device according to appendix 3,

in which the cap layer includes gallium nitride.

What is claimed is:
 1. A manufacturing method of a semiconductor devicehaving a field effect transistor, comprising the steps of: (a) providinga structure having a substrate, a channel layer being formed over thesubstrate and including a nitride semiconductor, a first nitridesemiconductor layer formed over the channel layer, and a second nitridesemiconductor layer formed over the first nitride semiconductor layer;(b) forming, after step (a), a first metal layer including titanium ortantalum over the second nitride semiconductor layer excluding a firstregion; (c) forming, after step (b), a metal nitride layer by causingthe first metal layer and the second nitride semiconductor layer toreact by thermal treatment; (d) removing, after step (c), the metalnitride layer by wet etching, and leaving the second nitridesemiconductor layer of the first region; and (e) forming, after step(d), a gate electrode over the second nitride semiconductor layerremaining in the first region.
 2. The manufacturing method of thesemiconductor device according to claim 1, wherein the first nitridesemiconductor layer is an aluminum gallium nitride layer.
 3. Themanufacturing method of the semiconductor device according to claim 2,wherein the second nitride semiconductor layer is a gallium nitridelayer.
 4. The manufacturing method of the semiconductor device accordingto claim 3, Wherein, in a region where the first metal layer is formedin step (b), a lower part of the second nitride semiconductor layerremains, in step (d), over the first nitride semiconductor layer.
 5. Themanufacturing method of the semiconductor device according to claim 4,further comprising: (f) a step of forming, after step (d), a sourceelectrode and a drain electrode over the lower part.
 6. Themanufacturing method of the semiconductor device according to claim 5,wherein, in step (b), a stacked metal film having the first metal layerat the bottom layer is formed over the second nitride semiconductorlayer excluding the first region.
 7. The manufacturing method of thesemiconductor device according to claim 3, wherein the second nitridesemiconductor layer in the structure provided in step (a) is a p-typegallium nitride layer.
 8. The manufacturing method of the semiconductordevice according to claim 3, wherein the second nitride semiconductorlayer in the structure provided in step (a) is a stacked layer film of afirst gallium nitride layer in an intrinsic state and a second p-typegallium nitride layer formed over the first layer gallium nitride. 9.The manufacturing method of the semiconductor device according to claim3, wherein the second nitride semiconductor layer in the structureprovided in step (a) is a first gallium nitride layer in an intrinsicstate.